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LED device and manufacture method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of increased manufacturing costs and low manufacturing yields.

Active Publication Date: 2012-07-25
INNOLUX CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacturing yield of the above method is not high, and the manufacturing cost is greatly increased

Method used

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  • LED device and manufacture method thereof
  • LED device and manufacture method thereof
  • LED device and manufacture method thereof

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Embodiment Construction

[0050] In order to solve the problems encountered in the prior art, the present invention provides a light-emitting diode device and its manufacturing method, so that the light-emitting diode device with an insulating substrate has a vertical electrode structure, except that it does not need to sacrifice part of the light-emitting area (reducing the effective light-emitting area) In addition, it can improve the uniformity of the electron flow effectively injected into the light-emitting layer (so that the current flow path is evenly distributed to the entire light-emitting diode), and the overall luminous efficiency is improved.

[0051] According to an embodiment of the present invention, the LED device may include: an insulating substrate having an upper surface and a lower surface; a patterned conductive layer disposed on a part of the upper surface of the insulating substrate; a buffer layer disposed on the insulating substrate. The upper surface of the substrate not covere...

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Abstract

The invention provides a LED device and a manufacture method thereof. The LED device comprises an insulating base which has an upper surface and a lower surface; a graphical conducting layer configured on part of an upper surface of the insulating base; a buffer layer configured on the upper surface of the insulating base that is not covered by the graphical conducting layer; a first semiconductor layer configured on the buffer layer; a luminous layer configured on the first semiconductor layer; a second semiconductor layer configured on the luminous layer; and an electrode configured on the second semiconductor layer.

Description

technical field [0001] The present invention relates to a light emitting diode device and a manufacturing method thereof, in particular to a light emitting diode device with a vertical electrode structure and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED for short) is widely used in various display products because of its advantages of high brightness, small size, light weight, unbreakable, low power consumption and long life. Its light emitting principle is as follows : Apply a voltage to the diode to drive electrons and holes in the diode to combine, and the energy generated by this combination is released in the form of light. [0003] figure 1 It is a schematic cross-sectional structure diagram of a known light-emitting diode 10 with a sapphire substrate. The LED 10 includes a sapphire substrate 12 , a buffer layer 13 , a semiconductor element layer 15 , a first electrode 20 and a second electrode 22 . The semiconductor device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/40H01L33/00
Inventor 谢鸿生
Owner INNOLUX CORP