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Cavity pressure control method

A pressure control and chamber technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inability to switch air pressure, unstable chamber pressure, and unfixed opening width of the gas outlet, so as to ensure accurate sexual effect

Active Publication Date: 2014-12-03
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the etching and deposition in the existing TSV are very fast alternately, each step is only about 1 second, so when the traditional pressure servo mode is used, the method of slowly adjusting the valve opening according to the required target pressure can obtain stable pressure after a certain period of time. air pressure, but the time to reach a stable air pressure is too long, often much longer than 1 second, so when the air pressure in the reaction chamber has not reached a stable pressure, the processing flow has to be switched to the next step, which will cause the air pressure in the reaction chamber to Cannot switch between required values ​​for a long time
[0005] However, when using the above technology to form TSV, it was found that the pressure in the chamber could not stay at the first pressure or the second pressure stably, but there was a large error; when the TSV was formed, it was found that there were many obvious problems on the side wall of the TSV. striation, which affects the performance of semiconductor devices
[0006] Similarly, in other chamber pressure control in the prior art, the opening width of the gas outlet is not fixed, and there are also problems of unstable and inaccurate chamber pressure

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] refer to figure 1 As shown, in this embodiment, the gas supply device 200 supplies reaction gas to the chamber 100 through the inlet valve 110, and a swing valve 150 is arranged at the gas outlet, and the reacted gas can be discharged into the exhaust system through the swing valve 150 300 in. Specifically, the top of the chamber 100 is an insulating window 140 , and a plurality of coils 120 for generating radio frequency signals are arranged on the insulating window 140 , and the coils 120 are connected to a radio frequency power source 130 . The chamber 100 includes a base (i.e., the lower electrode) 22, which is connected to a radio frequency power source 160. An electrostatic chuck 21 is arranged on the base 22. The edge of the electrostatic chuck 21 is an edge ring 10. The wafer to be processed 20 is clamped on an electrostatic chuck 21.

[0046] In this embodiment, a pressure sensor (not shown in the figure) may also be provided in the chamber 100, so that the a...

Embodiment 2

[0070] refer to Figure 4 As shown, the chamber pressure control method provided in this embodiment may include:

[0071] Step S21, setting a target pressure, and obtaining the opening width of the gas outlet corresponding to the target pressure;

[0072] Step S22, keeping the opening width of the gas outlet unchanged, so that the pressure of the chamber is the target pressure;

[0073] Step S23, after keeping for a certain period of time, measure the actual pressure of the chamber, and compare the actual pressure with the target pressure;

[0074] Step S24, when the absolute value of the difference between the actual pressure and the target pressure is less than or equal to a threshold, keep the opening width unchanged for a certain period of time;

[0075] Step S25, when the absolute value of the difference between the actual pressure and the target pressure is greater than a threshold, adjust the opening width, measure the actual pressure of the chamber and compare the ac...

Embodiment 3

[0082] In this embodiment, the target pressure includes at least the first pressure and the second pressure, and the target pressure of the chamber pressure within the first time period is the first pressure, and the target pressure within the second time period is the second pressure.

[0083] refer to Figure 5 As shown, the pressure control method of the chamber provided in this embodiment includes:

[0084] Step S31, setting the target pressure, and obtaining the opening width of the gas outlet corresponding to the target pressure, the obtaining the opening width corresponding to the target pressure includes: respectively obtaining the first opening width corresponding to the first pressure and a second opening width corresponding to the second pressure;

[0085] Step S32, keeping the opening width of the gas discharge port unchanged, making the pressure of the chamber the target pressure, specifically including: maintaining the opening width of the chamber at the first o...

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Abstract

The invention discloses a cavity pressure control method. A cavity comprises a gas diffusion port and a gas discharge port. The cavity pressure control method includes the steps: setting a target pressure and acquiring an opening width, corresponding to the target pressure, of the gas diffusion port; and keeping the opening width of the gas diffusion port unchanged to enable the pressure of the cavity to be the target pressure. Using the cavity pressure control method can obtain precise and stable cavity pressure.

Description

technical field [0001] The invention relates to the technical field of pressure control, in particular to a pressure control method for a chamber. Background technique [0002] In the production process of semiconductor devices, the pressure control of the reaction chamber is very important. Especially in the multi-step etching process, since the pressure of the reaction chamber directly affects the etching effect, it is more necessary to precisely control the pressure of the reaction chamber so that multiple pressures in the chamber can be repeated and alternated stably. [0003] For example, in the process of forming through-silicon vias (TSVs) using a multi-step etching process, inductively coupled plasma (ICP) etching technology or capacitively coupled plasma (CCP) etching technology can be used specifically. The entire etching process includes Multiple cycles, each cycle can generally be divided into three steps: cleaning (Clean Step, CS), etching (Etch Step, ES) and d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
Inventor 黄秋平许颂临辛朝焕严利均周旭升
Owner ADVANCED MICRO FAB EQUIP INC CHINA