TFT (thin film transistor) array substrate, manufacturing method of TFT array substrate and display device

Abstract

A TFT array substrate, a manufacturing method thereof and a display apparatus. The TFT array substrate comprises: a substrate (10) having a gate electrode (12), a gate insulation layer (17), a semiconductor active layer (18), a data line, a source electrode (14) / a drain electrode (15), a pixel electrode (16) formed thereon. The data line being connected with the source electrode (14). The drain electrode (15) is connected with the pixel electrode (16), wherein a first insulation layer (19), a metal layer (20) and a second insulation layer (21) are sequentially formed between the source electrode (14) / a drain electrode (15) and the pixel electrode (16). The metal layer (20) is connected with the stable voltage signal line through a through-hole (23) of the metal layer lead, thus the influence of the coupling capacitance of the TFT array substrate to the voltage of the pixel electrode is reduced, and meanwhile, the aperture ratio of the pixel unit is increased.

Description

technical field [0001] The invention relates to the display field of electronic equipment, in particular to a TFT array substrate, a manufacturing method of the TFT array substrate and a display device. Background technique [0002] With the development of information and network, electronic display technology has been widely used as a technology. Currently, LCD (Liquid Crystal Display) display devices are widely used, and electronic paper, which is a substitute for people to read paper, is also developing rapidly. [0003] The active driving method of LCD display devices and electronic paper display devices usually adopts active matrix driving technology, such as TFT (Thin Film Transistor) array substrate driving method. [0004] In the process of realizing the TFT array substrate, coupling capacitance is usually generated between the pixel electrode and the source electrode. In order to reduce the coupling capacitance between the pixel electrode and the source electrode,...

AI Technical Summary

Problems solved by technology

In order to reduce the coupling capacitance between the pixel electrode and the source electrode, the overlapping area between the pixel electrode and the source electrode is generally reduced by reducing the area of ​​the pixel electrode, so that the coupling capacitance between the source electrode and the pixel electrode is reduced. , but this also reduces the aperture ratio of the pixel unit, thereby affecting the contrast of the electronic display device driven by the TFT array substrate

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