Micromechanical silicon-based clamped beam-based frequency detector and detection method

A technology of frequency detector and fixed beam, applied in the field of micro-electronic mechanical system

Inactive Publication Date: 2012-10-17
SOUTHEAST UNIV
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Problems solved by technology

At present, the widely used frequency measurement methods can be divided into the following four types: heterodyne method, counting method, resonance method and phase ...

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  • Micromechanical silicon-based clamped beam-based frequency detector and detection method
  • Micromechanical silicon-based clamped beam-based frequency detector and detection method
  • Micromechanical silicon-based clamped beam-based frequency detector and detection method

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings.

[0028] see Figure 1-3 , the frequency detector based on the micromachined silicon-based solid beam provided by the present invention, the frequency detector includes

[0029] Power divider P, 90-degree phase shifter Y, low-pass filter L and Si MOSFET;

[0030] Power divider, used to receive the microwave signal to be tested, and divide the microwave signal to be tested into two branch signals with the same amplitude and phase, namely the first microwave signal and the second microwave signal, and output them to the Si MOSFET respectively and 90 degree phase shifter;

[0031] The 90-degree phase shifter is used to receive the second microwave signal, delay the second microwave signal, generate a phase shift proportional to the frequency of the signal, and output the third microwave signal to the Si MOSFET structure ;

[0032] A low-pass filter is used to connect th...

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Abstract

The invention discloses a micromechanical silicon-based clamped beam-based frequency detector and a detection method. The frequency detector comprises a power divider (P), a 90-degree phase shifter (Y), a low-pass filter (L) and a silicon-based metal-oxide-semiconductor field effect transistor; and the power divider is used for receiving a microwave signal to be detected and dividing the microwave signal to be detected into two branch signals with the same amplitude and phase. The detection method includes the following steps: when a direct-current offset is loaded on a first pull-down electrode (81) and a second pull-down electrode (82) and a clamped beam (7) is pulled down and is in contact with a grid (5), two channels of microwave signals are simultaneously loaded on the grid (5), the silicon-based metal-oxide-semiconductor field effect transistor is in a frequency detection state, the saturation current output between a source (2) and a drain (3) contains the current component of the frequency information of the signal to be detected, and by detecting the magnitude of saturation current, frequency detection is finally fulfilled. The structure of the frequency detector is simple, and measurement is easy.

Description

technical field [0001] The invention proposes a frequency detector based on micromechanical silicon-based solid-supported beams, which belongs to the technical field of microelectromechanical systems (MEMS). Background technique [0002] Frequency is one of the three basic parameters that characterize microwave signals. Microwave signal frequency detectors are widely used in radar electronic detection systems and microwave communications. The principle of existing microwave frequency detectors is to try to directly or indirectly compare the measured frequency with the standard frequency. At present, the widely used frequency measurement methods can be divided into the following four types: heterodyne method, counting method, resonance method and phase comparison method. They have the advantages of high precision and wide frequency band, but their biggest disadvantage is that they need more precise measurement. instrument. With the development of science and technology, th...

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Application Information

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IPC IPC(8): G01R23/02
Inventor 廖小平华迪
Owner SOUTHEAST UNIV
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