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Electron beam lithography system and method for improved throughput

A technology of electron beam and electron beam device, applied in the field of electron beam lithography system for improving yield, can solve the problems of undesired Coulomb effect, increase of writing time, etc.

Active Publication Date: 2015-10-07
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it should be understood that higher beam currents may lead to undesired Coulomb effects requiring increased write times to prevent this effect
Thus, although existing e-beam lithography systems and methods are generally adequate for their intended purposes, they cannot be fully qualified in all respects

Method used

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  • Electron beam lithography system and method for improved throughput
  • Electron beam lithography system and method for improved throughput
  • Electron beam lithography system and method for improved throughput

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Embodiment Construction

[0031] The invention below provides many different embodiments or examples for implementing different elements of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to be limiting. For example, the following description of a first component being formed over or on a second component may include embodiments in which the first and second components are formed in direct contact, and may also include embodiments in which additional components are formed between the first and second components. Between embodiments such that the first and second components are not in direct contact. Additionally, the present disclosure may repeatedly refer to numbers and / or letters in various examples. This repetition is for brevity and clarity and does not in itself dictate a relationship between the various embodiments and / or structures described

[0032] figure 1 is a ...

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Abstract

An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer.

Description

technical field [0001] The present invention relates to the field of semiconductor processing, and more particularly, to electron beam lithography systems and methods for improved throughput. Background technique [0002] Microfabrication traditionally uses photolithography, or photolithography, processes for the selective removal of portions of a substrate, or portions of a layer of material on a substrate. For example, photolithography uses a source of direct light (radiant light) to transfer a pattern from a photomask (also referred to as a mask or reticle) to a photosensitive resist material formed on a substrate or layer of material, thereby An exposure pattern is created in the resist material. Chemical treatments can then be used for etching, or transferring the exposed pattern in the resist material to the substrate or layer of material. More recently, microfabrication has implemented other types of lithography, such as charged particle beam lithography, which does...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/20B82Y10/00B82Y40/00G03F7/2059H01J37/3026H01J37/3174H01J2237/31764Y10S430/143
Inventor 许照荣林世杰王文娟林本坚
Owner TAIWAN SEMICON MFG CO LTD