Thermal oxidation system with liquid accumulation preventing function and thermal oxidation method

Abstract

Provided in the present invention is a thermal oxidation system, comprising: a reactor for use in preparing oxidized silicon by wet oxidation and a water vapor generation chamber in which a raw material gas reacts to generate water vapor which is transferred into the reactor via a pipe; a raw material gas intake pipe for use in supplying the raw material gas to the vapor generating chamber, a carrier gas intake pipe for use in supplying the carrier gas to the reactor, and a heater coupled to the raw material gas intake pipe for use in heating the raw material gas allowing same to generate the water vapor. The system is characterized in that: also comprised is a heater apparatus coupled to the carrier gas intake pipe. In the thermal oxidation system and a method therefor of the present invention, because the carrier gas is heated, liquid water accumulation is prevented in the intake pipe, thus controlling the quality of thin film growth, and improving the reliability of semiconductor components.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a thermal oxidation system and method for preventing water from accumulating in a reaction system for heating a semiconductor process. Background technique [0002] Semiconductor devices and corresponding processes generally require the use of insulating materials with good insulating properties and chemical stability, especially electrical insulating materials that can be tightly combined with substrates such as silicon and have few interface defects. Silicon dioxide is widely used in gate oxide layer, device protection layer, electrical isolation layer, etch stop layer, anti-diffusion layer, liner layer, interlayer insulating layer and capacitor dielectric film of MOSFETs due to its good properties. [0003] Preparation of SiO 2 There are many methods, including thermal decomposition deposition, sputtering, vacuum evaporation, anodic oxidation, CVD, thermal o...

AI Technical Summary

Problems solved by technology

In addition, the long-term accumulation of liquid water in the part of the pipeline 3 from the valve 4 to the air inlet 2 will cause corrosion of the pipeline 3. After the corrosion is perforated, external air or impurities enter the pipeline and are brought into the reaction furnace, polluting the environment in the furnace and causing wafer quality damage. Severe decline, or even complete product scrapping

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