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Deep silicon etching method

A technology of deep silicon etching and photolithography, which is applied in the fields of decorative art, gaseous chemical plating, microstructure technology, etc., can solve the problem of steepness deviation of deep silicon etching process, and achieve the reduction of sidewall morphology effect of change

Inactive Publication Date: 2012-11-28
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0004] In view of the defects in the above-mentioned prior art, the purpose of the present invention is to propose a deep silicon etching method to solve the problem of steepness deviation caused by the deep silicon etching process

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Embodiment Construction

[0024] In order to meet the needs of the application development of semiconductor and MEMS devices, in order to effectively overcome the influence of the micro loading effect of the BOSCH process in deep silicon etching, and to increase the steepness of the overall size of the pattern during release. The invention proposes a deep silicon etching method.

[0025] The deep silicon etching method of the present invention is particularly suitable for the situation where the pattern to be etched has a variety of widths and large differences. As we all know, the deep silicon etching process includes: I design a photolithography pattern, II form a mask on the sample to be processed according to the designed photolithography pattern, and III perform deep silicon ICP (inductance) on the sample to be processed under the mask. Plasma) etching to form the desired structure. On this basis, the deep silicon etching method of the present invention proposes improvement measures for several step...

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Abstract

The invention discloses a deep silicon etching method, comprising the following steps of: s1, designing a photoetching plate pattern provided with grooves which are different in width, partitioning the grooves by virtue of thin lines along the width direction of the grooves, and enabling the partitioned grooves to be the same in width; s2, forming a mask on a to-be-machined sample according to the designed photoetching plate pattern; and s3, performing deep silicon ICP (inductively coupled plasma) etching on the to-be-machined sample under the mask, and etching off the mask part formed by the thin fines simultaneously. Via the application of the technical scheme of the invention, the appearance change of a sidewall caused by the large dimensional difference of the widths of the grooves during the deep silicon etching can be effectively reduced, and the steepness deviation of the sidewall is controlled to be less than 1 mu m.

Description

Technical field [0001] The invention belongs to the field of semiconductor and MEMS device processing, and in particular relates to a new method for reducing the sidewall topography changes caused by the difference in opening size in deep silicon etching. Background technique [0002] The development of semiconductor and MEMS (Micro-Electro-Mechanical Systems) device technology largely depends on the continuous progress of micro-nano processing technology. With the widespread adoption and continuous development of high aspect ratio dry etching technology, bulk silicon MEMS devices have also been used more and more widely; however, many bulk silicon MEMS devices have structures of different sizes, which are influenced by the Bosch (BOSCH) process. The influence of the micro loading (micro-loading) effect, when the structure is released, can only ensure the sidewall steepness of a certain size structure, which has a greater impact on the performance of bulk silicon MEMS devices. A...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B81C1/00G03F7/00
Inventor 付思齐时文华王敏锐张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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