Data readout circuit for phase change memorizer
A phase-change memory and data readout technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of incompatibility between data readout rate and power consumption, and achieve the goal of eliminating data crosstalk and optimizing power consumption , Improve the effect of data readout speed
Active Publication Date: 2015-03-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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[0010] The purpose of the present invention is to provide a data readout circuit of a phase-change memory with switchable read voltage / read current, which is used to solve the problem that the data readout rate and power consumption cannot be compatible in the prior art
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[0029] The inventors of the present invention have found that the data readout circuit of the traditional phase change memory adopts a single read mode (either read current mode or read voltage mode), which has weak adaptability and cannot be selected to match it according to the load condition. In the read mode, data readout speed and power consumption cannot be achieved at the same time, and it is difficult to obtain the best performance effect.
[0030] Therefore, in order to prevent the occurrence of the above-mentioned defects, the inventors of the present invention have improved the prior art and proposed a data readout circuit with switchable read voltage / read current, which has both the read current mode and the read voltage mode, and The matching read current mode or read voltage mode can be selected according to different load conditions, so as to achieve the best effect of read rate, high and low resistance state resolution, and power consumption.
[0031]The data r...
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The invention relates to a voltage-reading / current-reading switchable data readout circuit for a phase change memorizer. The data readout circuit comprises a clamping voltage generating circuit, a pre-charge circuit, a clamping circuit which has a first working mode for generating a clamping current and a second working mode for generating a pre-amplifier voltage, a reading mode switching circuit which selects a current-reading mode or a voltage-reading mode under the control of reading mode selection signals; a current / voltage switching circuit which calculates a clamping current and a reference current under the current-reading mode, transforms into two complementary voltages; and a comparative amplifying circuit which compares the selected two voltages and outputs readout results, wherein, in the current-reading mode, the two voltages are the two voltages formed by transformation of the current / voltage switching circuit; and in the voltage-reading mode, the two voltages are the pre-amplifier voltage and the reference voltage under the voltage-reading mode. Compared with a conventional data readout circuit, the data readout circuit provided by the invention realizes the switch of the voltage-reading / current-reading, and can select matching reading modes to different loading conditions.
Description
technical field [0001] The invention relates to a phase-change memory, in particular to a data readout circuit of a phase-change memory with switchable read voltage / read current. Background technique [0002] Phase change memory (PC-RAM) is a new type of resistive nonvolatile semiconductor memory. Compared with various semiconductor storage technologies currently available, it has low power consumption, non-volatile, high density, and radiation resistance. Photo, non-volatile, high-speed reading, long cycle life (>10 13 times), device size shrinkability (nanoscale), high and low temperature resistance (-55°C to 125°C), anti-vibration, anti-electronic interference and simple manufacturing process (can be matched with existing integrated circuit technology), etc., It is the most powerful competitor in the next-generation memory, which is widely favored by the industry, and has a broad market prospect. [0003] Phase-change memory uses chalcogenide material as the storage ...
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IPC IPC(8): G11C16/06G11C16/26
Inventor 李喜陈后鹏宋志棠蔡道林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI