Exhaust method, exhaust apparatus and substrate treatment equipment

Abstract

An exhausting method, an exhausting apparatus and a substrate processing device. The exhausting method comprises the following steps: (1) setting at least two exhausting ports for a substrate processing chamber, and enabling the exhausting rates of the exhausting ports to be separately controlled; and (2) enabling the exhausting ports to exhaust outward at different exhausting rates. The exhausting apparatus comprises at least two exhausting ports connected to a substrate processing chamber. The exhausting rates of the exhausting ports may be separately controlled. The substrate processing device comprises a substrate processing chamber and the exhausting apparatus.

Description

technical field [0001] The present invention relates to the technical field of microelectronic processing, in particular to an exhaust method and device and substrate processing equipment using the above exhaust method or device. Background technique [0002] In the manufacturing process of microelectronic products, it is necessary to carry out various thin film preparation processes on the surface of the substrate. Among them, there is a commonly used chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) process, which is a thin film preparation technology that utilizes the chemical reaction of the process gas to form a desired film layer on the surface of the substrate. Film layers with various characteristics and uses such as crystalline film, amorphous film, insulating film, conductive film and protective film can be prepared by using this process. [0003] In the CVD process, whether the process gas can fully and uniformly contact the su...

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Problems solved by technology

However, due to the complex structure of the substrate holding part and the spacer in this technical solution, the film attached to the complex mechanism is easy to fall off and form particle pollution.

Moreover, the design scheme of the above-mentioned baffle device has a great correlation with the volume of the chamber, and the gas distribution effect produced when the same baffle device is installed in substrate processing chambers with different volumes will be very different. ; Therefore, when applied to large-capacity substrate processing equipment, it is necessary to redesign and manufacture the above-mentioned partition device, thereby increasing the design and manufacturing costs of the equipment to a certain extent

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