Method for manufacturing a transparent conductive film
A technology of transparent conductivity and manufacturing method, applied in the direction of cable/conductor manufacturing, equipment for manufacturing conductive/semiconductive layers, circuits, etc., can solve the problem of reducing film conveying speed, increasing the length of heating furnace, and huge equipment and other issues to achieve the effect of optimizing the crystallization process and improving productivity
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Embodiment 1
[0102] (formation of anchor layer)
[0103] Two layers were formed on a biaxially stretched polyethylene terephthalate film (manufactured by Mitsubishi Plastics Corporation, trade name "DIAFOIL", glass transition temperature 80°C, refractive index 1.66) with a thickness of 23 μm by a roll-to-roll method base coat. First, a thermosetting resin composition containing a melamine resin:alkyd resin:organosilane condensate in a weight ratio of 2:2:1 in terms of solid content was diluted with methyl ethyl ketone so that the solid content concentration was 8% by weight. This solution was coated on one main surface of a PET film, and heated and cured at 150° C. for 2 minutes to form a first undercoat layer with a film thickness of 150 nm and a refractive index of 1.54.
[0104] A silicone-based thermosetting resin (manufactured by COLCOAT CO., Ltd., trade name "COLCOAT P") was diluted with methyl ethyl ketone so that the solid content concentration was 1% by weight. Apply this soluti...
Embodiment 2
[0111] In Example 2, in the same manner as in Example 1, a wound body of a transparent conductive thin film formed with a crystalline ITO film was formed, but only when the transport tension per unit width in the furnace in the crystallization process was set to 51N The aspect of / m is different from Example 1.
Embodiment 3
[0113] In Example 3, in the same manner as in Example 1, a wound body of a transparent conductive thin film formed with a crystalline ITO film was formed, but only when the transport tension per unit width in the furnace in the crystallization process was set to 65N The aspect of / m is different from Example 1.
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