Fast reading and writing method applied to nandflash storage device

Abstract

The invention provides a fast read-write method for a nandflash memory device. The method comprises an error correction code (ECC) control register and a management debugging partition which is used for debugging a management byte area, wherein the ECC control register comprises a management byte enabled bit, a left sector data enabled bit, a right sector data enabled bit, an error correction enabled bit and a management byte length control bit; when a left sector in a user data area is read, the left sector data enabled bit in the ECC control register is enabled; if the left sector is located in a first user data area, the management byte length control bit in the ECC control register is configured to be effective; when the user data area formed by the left sector and a right sector is read, the left sector data enabled bit and the right sector data enabled bit in the ECC control register are enabled; and if the user data area is the first user data area, the management byte length control bit in the ECC control register is configured to be effective. By means of the method, read-write speeds of the nandflash memory device are increased, and accuracy of loading information and the use ratio of hardware are guaranteed.

Description

technical field [0001] The invention relates to a reading and writing method of a nandflash storage device, in particular to a fast reading and writing method applied to a nandflash storage device. Background technique [0002] Many new nandflashes on the market now require storage controllers to support ECC checks in units of 1k bytes. Taking a nandflash with a physical page size of 4k as an example, the storage method of user data in an actual physical page is usually as attached figure 1 As shown, the nandflash memory is composed of several physical blocks, and the physical block includes several physical pages, and the physical page includes a management byte area, several user data areas composed of at least two sectors, and several user data areas respectively related to the user data area One-to-one corresponding error check area (ECC), each error check area (ECC) is used to check and correct the error code of the user data area it is responsible for, and the managem...

AI Technical Summary

Problems solved by technology

[0007] When the user only needs the data of the previous sector or the next sector in the 1k user data, if the entire 1k data is loaded into the storage controller cache, the storage controller cache will inevitably need to increase the capacity of one sector; In addition, only one sector needs to be corrected. If the entire 1k user data is corrected, the reading speed of nandflash will inevitably be reduced.

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