Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Atomizing cleaning device and method

An atomization cleaning and pneumatic atomization technology, which is applied in chemical instruments and methods, cleaning methods and utensils, cleaning methods using liquids, etc., can solve the problem that the atomization mechanism cannot meet the needs of semiconductor cleaning technology, and achieve simple structure, The effect of easy process, convenient repair and maintenance

Active Publication Date: 2015-03-18
BEIJING SEVENSTAR ELECTRONICS CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the atomization and injection devices for forming ultra-fine droplets mainly adopt mechanical atomization, medium atomization, ultrasonic atomization and electrostatic atomization, but the pure atomization mechanism cannot meet the needs of semiconductor cleaning technology.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Atomizing cleaning device and method
  • Atomizing cleaning device and method
  • Atomizing cleaning device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The atomization cleaning device and method of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0032] In the description of the present invention, it should be noted that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying Describes, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and operate in a specific orientation, and there...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an atomizing cleaning device and method. The atomizing cleaning device comprises a cooling structure, a resonance atomizing structure and a pneumatic atomizing structure. The resonance atomizing structure is fixedly arranged on the pneumatic atomizing structure, the cooling structure is fixedly arranged on the resonance atomizing structure, and the resonance atomizing structure comprises a transducer and a resonator. The resonator is provided with a liquid discharge hole. The pneumatic atomizing structure is provided with a second liquid inlet, a second air inlet hole and an atomizing injection orifice. The liquid discharge hole is connected with the second liquid inlet hole which is communicated with the atomizing injection orifice, and the second air inlet hole is communicated with the atomizing injection orifice. The atomizing cleaning device provided by the invention is simple in structure and high in integration degree, ultramicro atomizing drops are sprayed, and the process is easy to implement. The problem that large size drops or injection flows produced by a pure atomizing mechanism severely damage patterns on the surface of silicon wafers which are of 65 nanometers and below is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer technology, in particular to an atomization cleaning device and method for semiconductor wafer cleaning. Background technique [0002] Semiconductor wafers are mainly silicon wafers with pure silicon substrates and silicon wafers with copper interconnection structures. With the rapid development of integrated circuits, especially the further reduction of the line width of copper interconnection lines, the cleaning technology requirements for semiconductor wafers are getting higher and higher. In order to obtain high-quality semiconductor devices, it is no longer the ultimate requirement to only remove the contamination on the surface of the silicon wafer, and the surface defects and surface roughness caused during the cleaning process have become equally important parameters. Currently, device failures due to poor cleaning account for more than half of total IC manufacturing losses. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/02B08B13/00
Inventor 刘效岩吴仪初国超王浩
Owner BEIJING SEVENSTAR ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products