Variable doping structure of transmission-type photoelectric cathode material for enhancing thermal stability
A technology of photocathode and thermal stability, applied in the direction of photoemission cathode, discharge tube main electrode, etc., can solve the problems of doping distribution change, disappearance, built-in electric field strength reduction, etc., achieve low acceptor binding energy, improve high temperature Performance, Effect of Low Diffusion Coefficient
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[0020] Control attached figure 1 , variable doping GaAs photocathode material with high thermal stability is grown by MOCVD method: the substrate material is GaAs (100) substrate 11 , the structure growth steps are:
[0021] 1. Growth of AlGaAs corrosion barrier layer on the substrate material 12 ;
[0022] 2. Continue to grow GaAs zinc heavily doped layer 13 , GaAs Zn low-doped layer 14 ;
[0023] 3. In the low-doped layer of GaAs zinc 14 on Growth of GaAs Carbon Gradient Doped Layer 15 Form a built-in electric field;
[0024] 4. GaAs carbon gradient doped layer 15 on Grow GaAs Spacers 16 , AlGaAs window layer 17 ;
[0025] The specific steps are divided into:
[0026] 1) GaAs carbon gradient doped layer 15 The doping concentration of the low-doped layer from GaAs to Zn 14 GaAs spacer 16 Gradient increase;
[0027] 2) GaAs zinc low-doped layer 14 The introduction of the carbon distribution ensures that the GaAs Zn heavily doped layer 13 Completely disappe...
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