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Non-volatile memory device and manufacturing method thereof

A technology of non-volatile storage and manufacturing method, applied in the field of non-volatile storage devices, can solve problems such as shortening of conductive paths and change of resistance state, and achieve the effect of improving data retention characteristics

Active Publication Date: 2016-08-03
KIOXIA CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, in such a nonvolatile memory device, there is a problem that, for example, even in a state where no voltage is applied, the formed conductive path becomes short, and the resistance state changes.

Method used

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  • Non-volatile memory device and manufacturing method thereof
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  • Non-volatile memory device and manufacturing method thereof

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Embodiment Construction

[0021] Below, while referring to the attached Figure 1 Embodiments will be exemplified.

[0022] In addition, in each drawing, the same code|symbol is attached|subjected to the same component, and detailed description is abbreviate|omitted suitably.

[0023] A first embodiment will be described with reference to the drawings. figure 1 is a schematic cross-sectional view illustrating an example of a nonvolatile memory device.

[0024] In addition, in figure 1 In FIG. 2 , the part of the memory cell is mainly shown, and known word lines, bit lines, protective films, interlayer insulating films, contacts, peripheral circuit parts, etc. provided in the nonvolatile memory device 1 are omitted.

[0025] like figure 1 As shown, the nonvolatile memory device 1 includes a first electrode 3 , a memory cell 2 and a second electrode 8 .

[0026] The first electrode 3 is formed of a conductive material.

[0027] The conductive material is not particularly limited, and examples there...

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PUM

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Abstract

The present invention relates to a nonvolatile memory device and a manufacturing method thereof. According to one embodiment, a nonvolatile memory device of the present invention includes a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode. The memory cell has a holding unit, a variable resistance unit, and an ion supply unit. The holding part is provided on the first electrode and has an electron well. The resistance changing part is provided on the holding part. The ion supply unit is provided between the variable resistance unit and the second electrode and contains a metal element.

Description

[0001] (Citation of relevant literature) [0002] This application is based upon and claims the benefit of priority arising from prior Japanese Patent Application No. 2011-278990 filed on December 20, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a nonvolatile memory device and a manufacturing method thereof. Background technique [0004] There is a nonvolatile memory device in which a variable resistance portion and an ion supply portion are provided between two electrodes. [0005] In such a nonvolatile memory device, when a voltage is applied with the electrode on the side of the ion supply part as the positive electrode and the electrode on the variable resistance part as the negative electrode, the metal contained in the ion supply part becomes ions and The variable resistance part diffuses and accepts electrons from the electrode on the negative electrode side, thereby forming a metal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L21/8247
CPCH10N70/801H10N70/245H10N70/884H10N70/883H10N70/826H10N70/021H10N70/063
Inventor 薮原秀彦广谷太志片冈淳司龟冈恒志
Owner KIOXIA CORP