Nonvolatile three-dimensional semiconductor memory device and preparing method

Abstract

The invention relates to the technical field of microelectronics, and discloses a nonvolatile three-dimensional semiconductor memory device and a preparing method. The three-dimensional semiconductor memory device comprises bit lines made of strip-shaped connecting materials which are isolated by a plurality of insulating layers; each strip-shaped connecting bit line is provided with two surface zones along the side direction; word lines made of connecting materials are arranged in the direction orthogonal with the connecting bit lines; and storage materials are placed in the middle of a cross-shaped overlapping zone which is then used as an electric charge capturing stack zone or a resistance changing function zone. High-dielectric-constant materials can be used in a function zone of the three-dimensional semiconductor memory device, and high-work function materials such as metal nitride are used in a gate electrode. Therefore, according to the preparing method of the three-dimensional semiconductor memory device, partitioning zones arranged between the word lines are introduced first, then storage function layer materials and gate materials are deposited in a back-gate technology, a technology is simplified, material pollution is avoided, and meanwhile performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices and memories, and relates to a non-volatile three-dimensional semiconductor memory and a preparation method thereof. Background technique [0002] The advent of the era of large-capacity storage has intensified the technical requirements for high-density integration of storage technologies. Especially as the feature size of integrated circuit devices shrinks beyond the limits of conventional memory device technology, designers need to seek various new multi-layer stacking technologies to increase storage capacity and reduce bit cost. [0003] Based on the above considerations, two most typical three-dimensional memory structures have been proposed: one uses vertical columnar channels, such as BiCS and TCAT structures; the other uses multiple horizontal channels stacked with polysilicon layers, such as VG structures , whose structure is shown in figure 1 shown. In comparison, the...

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Problems solved by technology

Although the adoption of this gate-first process is simple, it substantially limits the selection of gate stack materials and gate electrode materials, which is not conducive to the optimization of storage performance.

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