Enabling Die Changes in Single-Fin Field-Effect Transistor Devices

Abstract

Methods for forming a single fin fin-like field effect transistor (FinFET) device are disclosed. An exemplary method includes providing a main mask layout and a trim mask layout to form fins of a fin-like field effect transistor (FinFET) device, wherein the main mask layout includes a first masking feature and the trim mask layout includes a second masking feature that defines at least two fins, the first masking feature and the second masking feature having a spatial relationship; and modifying the main mask layout based on the spatial relationship between the first masking feature and the second masking feature, wherein the modifying the main mask layout includes modifying the first masking feature such that a single fin FinFET device is formed using the modified main mask layout and the trim mask layout.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, to a method for realizing the core modification of a single fin field effect transistor device. Background technique [0002] Integrated circuit (IC) technology is constantly improving. This improvement often involves reducing the size of the device to obtain lower manufacturing costs, higher device integration density, faster speed and better performance. Photolithography is often used to form the components in integrated circuit devices. Typically, an exposure tool passes light through a mask or reticle and onto the photoresist layer of the wafer, causing the photoresist layer to have the integrated circuit components therein Image. The resolution of exposure tools limits the formation of smaller sized device patterns. For example, forming Fin Field Effect Transistor (FinFET) devices with fewer than two fins is limited due to existing lithographic resolu...

AI Technical Summary

Problems solved by technology

The resolution of exposure tools limits the formation of smaller-sized device patterns

For example, forming Fin Field Effect Transistor (FinFET) devices with fewer than two fins is limited by limitations in the resolution of existing lithography

Thus, while current lithography techniques are generally adequate for their intended purposes, as device dimensions continue to shrink, current lithography techniques are not satisfactory in all respects

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