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Divider layer arrangement for leds

A technology of LED devices and shunts, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as narrow width

Active Publication Date: 2016-03-02
LUMILEDS HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] It can be seen that the figure 1 The width of the bus bar in is made too small, otherwise the contact resistance will be too high, but less light is blocked and the width is desired to be narrow

Method used

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  • Divider layer arrangement for leds
  • Divider layer arrangement for leds
  • Divider layer arrangement for leds

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Experimental program
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Embodiment Construction

[0046] Figure 4 An embodiment of the metal shunt pattern 40 on the top surface of the LED die according to an embodiment of the present invention is shown. The LED die can have figure 2 The same layer in the prior art LED die.

[0047] According to Equation 1 above, one way to control the position of current injection into the semiconductor along the bus bar is by appropriately adjusting the geometric parameters . Due to its substantially uniform current pattern, circular contacts 42 (dots) are preferred. The radius can be expressed as The contact resistance of the circular contact,

[0048] eq.3

[0049] In Equation 3, with They are the first and second types of modified Bessel functions. As in the case of bus bars, for , The contact resistance of circular contacts increases significantly. Therefore, in a preferred embodiment, the radius of each circular contact is approximately 2L t To 10L t between.

[0050] Therefore, the shunt layer pattern can be composed of several ...

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PUM

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Abstract

The shunt pattern on the surface of the LED die consists of an array of metal dots with a width of about 2Lt-5Lt (where Lt is the transmission length), so as not to block a large amount of light, but still have a low contact resistance with the semiconductor current spreading layer. For widths greater than 2Lt, the contact resistance did not decrease significantly. Each point represents a current injection region. For a minimum width of 2Lt and 50 square dots per mm2, the top surface area of ​​the LED die will have approximately 1% of its surface covered by dots. To allow the current to be evenly distributed across the top surface of the LED, the dots are connected with a grid of very thin metal connectors, much less than 2Lt in width. In one embodiment, wire bond electrodes are formed near the center of the top surface of the LED to generate a more uniform current distribution.

Description

Technical field [0001] The present invention relates to a light-emitting diode (LED), and in particular, to a patterned metal layer on a light-emitting surface LED die, which improves current distribution without increasing light shielding. Background technique [0002] Prior art figure 1 Is a top-down view of the LED die 10, figure 2 Is along figure 1 A simplified cross-sectional view of LED10 of line 2-2. In this example, the LED die 10 is GaN-based, and its growth substrate is removed. This structure is well known. Generally, the bottom metal anode electrode 12 is directly bonded to the base pad or the circuit board. The metal reflector 14 above the electrode 12 reflects light upward. The epitaxial growth semiconductor layer of the LED includes a first p-type layer 16, a p-type cladding layer 18, an active layer 20, an n-type cladding layer 22, a first n-type layer 24 and a second n-type layer 26. The various p- and n-type layers serving as interfaces between the cladding...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38
CPCH01L33/20H01L33/38H01L33/405H01L33/46H01L33/10H01L33/387
Inventor T.洛佩滋R.I.阿达滋
Owner LUMILEDS HLDG BV