Polymerizable composition, photosensitive layer, permanent pattern, wafer-level lens, solid-state photography device, and pattern forming method

Abstract

There is provided a polymerizable composition exhibiting high light-blocking effect in the infrared region and high light transparency in the visible region and being capable of forming a pattern with excellent resolution by alkali development, and a photosensitive layer, a permanent pattern, a wafer-level lens, a solid-state imaging device and a pattern forming method, each using the composition; and the composition contains a polymerization initiator, a polymerizable compound, a tungsten compound, an alkali-soluble binder, and an inorganic filler.

Description

technical field [0001] The present invention relates to a polymerizable composition, in particular to a polymerizable composition suitable for forming a solder resist, and a photosensitive layer, a permanent pattern, a wafer-level lens, and a solid-state photographic component each using the composition and pattern forming methods. Background technique [0002] A solid-state photographic device (image sensor) used in mobile phones, digital cameras, digital videos, surveillance cameras, and the like is a photoelectric conversion device with an integrated circuit formed using semiconductor device manufacturing technology. In recent years, as the size and weight of mobile phones or digital cameras have decreased, there has been a need to further downsize solid-state imaging components. [0003] To downsize solid-state photography components, a technique of applying a through-electrode or thinning a silicon wafer has been proposed (see, for example, JP-A-2009-194396 (as the ter...

AI Technical Summary

Problems solved by technology

For example, solder resist is used to fill the space between metal wirings in many cases, but there is a problem that infrared light such as light leaking into mobile phones, digital cameras, or the like cannot be cut off by solder resist

Carbon black has high light blocking effect in the visible region, but exhibits low light blocking effect in the infrared region, and when trying to apply this black resist as a solder resist, if a sufficient amount of carbon black is added to ensure all light blocking effects in the infrared region If light-blocking effect is required, this will cause the following problems: the light-blocking effect in the visible region becomes too high; it also cuts off light with wavelengths shorter than the visible region (usually used in imaging and exposed to high-pressure mercury lamps, KrF, ArF or and its analogues) resulting in reduced sensitivity, making it impossible to obtain sufficient light-curability; and inability to obtain excellent patterns, even with a development step using an alkaline developer

[0006] In addition, at present, the infrared blocking layer is separately provided after the solder resist is formed by the coating method, so in the formation of the solder resist and the formation of the infrared blocking layer, steps such as coating, exposure, development, and post-heating must be performed many times, It leads to troublesome process and increased cost

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