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Graphite crucible for single crystal pulling apparatus, and method for manufacturing the graphite crucible

A technology of graphite crucible and pulling device, which is applied in the direction of self-melt pulling method, single crystal growth, single crystal growth, etc., can solve the problems of graphite crucible cracking and other problems, and achieve the effect of inhibiting SiC formation and realizing the service life.

Active Publication Date: 2013-08-14
TOYO TANSO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when such heat treatment is repeated, the graphite crucible is gradually transformed into SiC, and the size of the graphite crucible changes, or the material is weakened and microcracks occur, resulting in cracking of the graphite crucible.

Method used

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  • Graphite crucible for single crystal pulling apparatus, and method for manufacturing the graphite crucible
  • Graphite crucible for single crystal pulling apparatus, and method for manufacturing the graphite crucible
  • Graphite crucible for single crystal pulling apparatus, and method for manufacturing the graphite crucible

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0071] figure 1 It is a vertical cross-sectional view of an example of the graphite crucible for a single crystal pulling device according to the first embodiment. The graphite crucible 2 holding the quartz crucible 1 is composed of a graphite crucible base material 3 as a graphite crucible molded body and a coating film of carbide containing a phenolic resin formed on the entire surface of the graphite crucible base material 3 (hereinafter, sometimes simply referred to as a phenolic resin). film.) 4 composition. In consideration of ensuring the mechanical strength necessary for the crucible and the ease of phenolic resin impregnation, the graphite crucible base material 3 is used as its characteristic with a bulk density of 1.70Mg / m 3 A base material having a flexural strength of 30 MPa or more and a Shore hardness of 40 or more. In addition, the carbide constituting the coating 4 may be a graphitized product partially or entirely graphitized.

[0072] Here, the shape of t...

Embodiment approach 2

[0086] Figure 4It is a vertical cross-sectional view of an example of a graphite crucible for a single crystal pulling device according to Embodiment 2. The graphite crucible 2 holding the quartz crucible 1 is composed of a graphite crucible base material 3 which is a graphite crucible molded body, and a pyrolytic carbon coating 4A formed on the entire surface of the graphite crucible base material 3 . In consideration of ensuring the mechanical strength necessary for the crucible and the ease of pyrolytic carbon precipitation, the graphite crucible base material 3 used as its characteristic has a bulk density of 1.65Mg / m 3 A base material having a flexural strength of 30 MPa or more and a Shore hardness of 40 or more.

[0087] Here, the shape of the graphite crucible 2 is generally cup-shaped, which consists of a bottom 2a, a curved portion (small R portion) 2b that is continuously curved with the bottom 2a and rises upward, and a straight body portion that is continuous wi...

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Abstract

A graphite crucible (2) for retaining a quartz crucible (1) has a graphite crucible substrate (3) as a graphite crucible forming material, and a coating film (4) made of a carbonized phenolic resin and formed over the entire surface of the graphite crucible substrate (3). The phenolic resin is impregnated inside open pores (5) existing in a surface of the graphite crucible substrate (3). The coating film (4) may be formed only within a portion of the graphite crucible in which SiC formation can occur easily, not over the entirety of the surface of the graphite crucible. For example, it is possible to deposit the film only on the entire inner surface of the crucible. It is also possible to deposit the film only on a curved portion (sharply curved portion) of the inner surface, or only on a curved portion and a straight trunk portion.

Description

technical field [0001] The present invention relates to a graphite crucible for use in a single crystal pulling device supporting silicon or the like based on the Czochralski method (hereinafter referred to as "CZ method") and a method for manufacturing the same. quartz crucible. Background technique [0002] Single crystals such as silicon used in the manufacture of ICs and LSIs are generally produced by the CZ method. The CZ method is a method in which polysilicon is placed in a high-purity quartz crucible, and the polysilicon is heated and melted by a heater while rotating the quartz crucible at a predetermined speed, so that the surface of the molten polysilicon is brought into contact with the seed crystal (single crystal silicon), Slowly pulling while rotating at a predetermined speed, the molten polycrystalline silicon is solidified and deposited on the single crystal silicon. [0003] However, since the quartz crucible softens at high temperatures and has insuffici...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/87C30B29/06C30B15/10
CPCC04B2237/363C04B2237/30C04B2237/592C30B35/002C30B15/10C04B2237/083C04B2237/76C04B35/63476C04B2235/95C04B35/6269C04B2237/66C04B41/009C04B35/6267C04B37/005C04B2237/84C04B41/5001C04B2237/341C04B2235/96C04B2237/708C04B2235/658C04B37/045C04B41/85C04B37/008C04B35/521C04B35/522C04B2235/616C04B2235/77C30B29/06Y10T117/1032C04B41/4535C04B41/4554C04B41/457C04B41/4572C04B41/87C30B15/00C30B15/20
Inventor 冈田修广濑芳明横井智光荻田泰久
Owner TOYO TANSO KK
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