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Graphite crucible for single crystal pulling device and manufacturing method thereof

A technology of graphite crucible and pulling device, which is applied in the direction of self-melting pulling method, single crystal growth, single crystal growth, etc., can solve the problems of cracking of graphite crucible, achieve the effect of suppressing SiC and realizing the service life

Active Publication Date: 2016-06-29
TOYO TANSO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when such heat treatment is repeated, the graphite crucible is gradually transformed into SiC, and the size of the graphite crucible changes, or the material is weakened and microcracks occur, resulting in cracking of the graphite crucible.

Method used

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  • Graphite crucible for single crystal pulling device and manufacturing method thereof
  • Graphite crucible for single crystal pulling device and manufacturing method thereof
  • Graphite crucible for single crystal pulling device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0071] figure 1 It is a vertical cross-sectional view of an example of the graphite crucible for a single crystal pulling device according to the first embodiment. The graphite crucible 2 holding the quartz crucible 1 is composed of a graphite crucible base material 3 as a graphite crucible molded body and a coating film of carbide containing a phenolic resin formed on the entire surface of the graphite crucible base material 3 (hereinafter, sometimes simply referred to as a phenolic resin). film.) 4 composition. In consideration of ensuring the mechanical strength necessary for the crucible and the ease of phenolic resin impregnation, the graphite crucible base material 3 is used as its characteristic with a bulk density of 1.70Mg / m 3 A base material having a flexural strength of 30 MPa or more and a Shore hardness of 40 or more. In addition, the carbide constituting the coating 4 may be a graphitized product partially or entirely graphitized.

[0072] Here, the shape of t...

Embodiment approach 2

[0086] Figure 4It is a vertical cross-sectional view of an example of a graphite crucible for a single crystal pulling device according to Embodiment 2. The graphite crucible 2 holding the quartz crucible 1 is composed of a graphite crucible base material 3 which is a graphite crucible molded body, and a pyrolytic carbon coating 4A formed on the entire surface of the graphite crucible base material 3 . In consideration of ensuring the mechanical strength necessary for the crucible and the ease of pyrolytic carbon precipitation, the graphite crucible base material 3 used as its characteristic has a bulk density of 1.65Mg / m 3 A base material having a flexural strength of 30 MPa or more and a Shore hardness of 40 or more.

[0087] Here, the shape of the graphite crucible 2 is generally cup-shaped, which consists of a bottom 2a, a curved portion (small R portion) 2b that is continuously curved with the bottom 2a and rises upward, and a straight body portion that is continuous wi...

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Abstract

The present invention provides a graphite crucible for a single crystal pulling device that can extend its service life and a manufacturing method thereof. The graphite crucible (2) holding the quartz crucible (1) is composed of a graphite crucible base material (3) which is a graphite crucible molded body, and a coating (4) formed on the entire surface of the graphite crucible base material (3). The coating film (4) Carbide containing phenolic resin. The phenolic resin is impregnated into the pores (5) present on the surface of the graphite crucible base material (3). The formation of the coating (4) is not limited to the entire surface of the graphite crucible, and may only be a portion that is easily SiC-formed. For example, it may precipitate only on the entire inner surface of the crucible, or it may precipitate only on the curved part (small R part) of the inner surface, or only on the curved part and the straight part.

Description

technical field [0001] The present invention relates to a graphite crucible for use in a single crystal pulling device supporting silicon or the like based on the Czochralski method (hereinafter referred to as "CZ method") and a method for manufacturing the same. quartz crucible. Background technique [0002] Single crystals such as silicon used in the manufacture of ICs and LSIs are generally produced by the CZ method. The CZ method is a method in which polysilicon is placed in a high-purity quartz crucible, and the polysilicon is heated and melted by a heater while rotating the quartz crucible at a predetermined speed, so that the surface of the molten polysilicon is brought into contact with the seed crystal (single crystal silicon), Slowly pulling while rotating at a predetermined speed, the molten polycrystalline silicon is solidified and deposited on the single crystal silicon. [0003] However, since the quartz crucible softens at high temperatures and has insuffici...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/10C04B41/87C30B29/06
CPCC04B35/6269C04B2235/95C04B2235/96C30B35/002C04B41/85C04B41/009C04B41/5001C04B35/521C04B35/522C04B2235/616C04B2235/77C30B29/06Y10T117/1032C30B15/10C04B41/4535C04B41/4554C04B41/457C04B41/4572C04B41/87C30B15/00C30B15/20
Inventor 冈田修广濑芳明横井智光荻田泰久
Owner TOYO TANSO KK
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