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Surface acoustic wave device

一种弹性表面波、电介质层的技术，应用在压电/电致伸缩/磁致伸缩器件、电气元件、阻抗网络等方向，能够解决产生寄生等问题

Active Publication Date: 2013-08-14
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in the surface acoustic wave device described in Patent Document 1, there is a problem that, for example, spurious waves are generated between the resonant frequency and the antiresonant frequency, or spurious is generated in the passband due to unwanted waves.

Method used

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Examples

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Embodiment Construction

[0029] Below, cite figure 1 The ladder-type surface acoustic wave filter device 1 shown is taken as an example to describe a preferred embodiment of the present invention. However, the surface acoustic wave filter device 1 is merely an example. The present invention is not limited by the surface acoustic wave filter device 1 in any way. The surface acoustic wave device according to the present invention may be, for example, a surface acoustic wave duplexer or a surface acoustic wave resonator. In addition, the surface acoustic wave device according to the present invention may be, for example, a longitudinally coupled resonator type surface acoustic wave filter device.

[0030] like figure 1 As shown, the surface acoustic wave filter device 1 has first and second signal terminals 11 and 12 . The first and second signal terminals 11 and 12 are connected by a series arm 13 . A plurality of series arm resonators S1 to S4 are connected in series on the series arm 13 . A capa...

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PUM

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Abstract

A surface acoustic wave device with suppressed reduction in frequency characteristics caused by unwanted waves is provided. The surface acoustic wave device (1) comprises a piezoelectric substrate (21), an IDT electrode (22) formed on top of the piezoelectric substrate (21), a first dielectric layer (23), and a second dielectric layer (24). The first dielectric layer (23) is formed on top of the piezoelectric substrate (21). The first dielectric layer (23) comprises silicon oxide. The second dielectric layer (24) is formed on top of the first dielectric layer (23). The second dielectric layer (24) has a faster sonic speed than the first dielectric layer (23). The surface acoustic wave device (1) also comprises a third dielectric layer (25). The third dielectric layer (25) is formed between the first dielectric layer (23) and the piezoelectric substrate (21). The third dielectric layer (25) covers the surface (21a) of the piezoelectric substrate (21), and the upper surface (22a) and the side surfaces (22b, 22c) of the IDT electrode (22).

Description

technical field [0001] The present invention relates to surface acoustic wave devices used in resonators, bandpass filters, and the like. Background technique [0002] Conventionally, surface acoustic wave devices utilizing surface acoustic waves have been widely used, for example, as resonators and filter devices. For example, Patent Document 1 below discloses, as an example of such a surface acoustic wave device, a surface acoustic wave device formed on a piezoelectric substrate and provided with a SiO layer formed to cover an IDT electrode. 2 film, and formed on SiO 2 SiN film on film. [0003] The surface acoustic wave device described in this patent document 1 has SiO 2 film, so it has good frequency temperature characteristics. In addition, in the surface acoustic wave device described in Patent Document 1, it can be formed on SiO by adjusting 2 The thickness of the SiN film on the film is used to adjust the frequency characteristics of the surface acoustic wave d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/145H03H9/25H10N30/88H10N30/87
CPCH03H9/25H03H9/14541H03H9/02574H03H9/605H03H9/145H03H9/0222H03H9/6483H10N30/88
Inventor 玉崎大辅
Owner MURATA MFG CO LTD