Phase change memory and manufacturing method thereof

Abstract

Provided are a phase change memory and a manufacturing method of the phase change memory. The manufacturing method of the phase change memory comprises the steps of (1) providing a semiconductor substrate which comprises a first area and a second area, (2) carrying out deposition to form a dielectric layer, forming a bottom electrode in the dielectric layer on the second area of the semiconductor substrate, (3) carrying out deposition to form a phase change material, carrying out etching on the phase change material, forming an imaging phase change material layer at the position, corresponding to the bottom electrode, of the upper portion of the dielectric layer, forming fake phase change pads at the partial position corresponding to the first area of the semiconductor substrate, wherein a gap exists between the imaging phase change material layer and each fake phase change pad, each fake phase change pad at least comprises two portions, and a gap exists between every two adjacent portions, and (4) carrying out cleaning processing on the semiconductor substrate after the fake phase change pads are formed. Due to the facts that the fake phase change pads are divided into a plurality of portions, and the gap exists between every two adjacent portions, the problem that the fake phase change pads are easy to peel off in the process of cleaning processing after etching of the phase change material is effectively solved.

Description

technical field [0001] The invention belongs to the field of microelectronics manufacturing, and in particular relates to a phase-change memory and a manufacturing method thereof. Background technique [0002] Phase Change Memory (PCM) has the characteristics of high read speed, low power, high capacity, high reliability, high rewritable times, and low operating voltage, and is very suitable for combining with CMOS technology, and can be used as a relatively High-density stand-alone or embedded memory applications are currently very promising next-generation memories. Due to the unique advantages of phase change memory technology, it is also considered very likely to replace the current highly competitive volatile memory (Volatile Memory) such as SRAM and DRAM and non-volatile memory (Non-volatile Memory) such as Flash. It is expected to become a new generation of semiconductor memory with great potential in the future. [0003] Phase-change memory uses the difference in r...

AI Technical Summary

Problems solved by technology

What is more serious is that even when the concentration of the cleaning solution is as small as 3000:1 (volume ratio of water to HF acid), the problem of peeling off of the pseudo-phase-change mat cannot be improved.

Images