Word line drive circuit and memory circuit

Abstract

The invention relates to a word line drive circuit and a storage device circuit. The word line drive circuit comprises a first PMOS (p-channel metal oxide semiconductor) transistor and a second NMOS (n-channel metal oxide semiconductor) transistor, wherein a source electrode of the first PMOS transistor is connected with a first signal end, a source electrode of a first NMOS transistor is connected with a second signal end, and a drain electrode of the first PMOS transistor is connected with a drain electrode of the first NMOS transistor and connected with a word line; a grid electrode of the first PMOS transistor is connected with a first control signal end, a grid electrode of the first NMOS transistor is connected with a second control signal end, and the width of a channel region of the first NMOS transistor is smaller than that of a channel region of the first PMOS transistor. By utilizing the word line drive circuit and the storage device circuit, the chip areas of the word line drive circuit and the storage device circuit can be reduced, and the power consumption of the storage device circuit can be reduced.

Description

technical field [0001] The invention relates to a memory circuit, in particular to a word line drive circuit and a memory circuit with low power consumption. Background technique [0002] In recent years, as the demand for portable electronic products continues to increase, the demand for memory in electronic products continues to increase, and especially with the advent of the Internet of Things era, the demand for passive electronic products such as RFID tags and smart cards continues to increase. People hope that the power consumption of the memory in the RFID tag and the smart card will be smaller and smaller, so that the working power consumption of the entire RFID tag and the smart card can be reduced. Since the power received by RFID tags and smart cards is a certain value, the low power consumption of the memory can make the sensing distance of RFID tags and smart cards longer, thereby improving the working performance of passive electronic products such as RFID tags...

AI Technical Summary

Problems solved by technology

In the prior art, since each bit line is connected with a pre-charging circuit or a pre-discharging circuit, the number of the pre-charging circuits or pre-discharging circuits is very large, and during the pre-charging or pre-discharging process, the The instantaneous current of the pre-charging circuit or pre-discharging circuit will be very large, so that the instantaneous power consumption of passive electronic products such as RFID tags and smart cards will be very large, which will reduce the working performance of passive electronic products such as RFID tags and smart cards.

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