Oxide semiconductor thin film transistor and manufacturing method thereof
A technology of oxide semiconductors and thin film transistors, which is applied in semiconductor/solid-state device manufacturing, transistors, semiconductor devices, etc., can solve problems such as damage and damage to the reliability of oxide semiconductor thin film transistor components, and achieve high reliability.
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[0033] Figure 1A to Figure 1E It is a schematic top view of the manufacturing process of an oxide semiconductor thin film transistor according to an embodiment of the present invention. Figure 2A to Figure 2E respectively along Figure 1A to Figure 1E The cross-sectional schematic diagram of the section line A-A'. It should be noted that, Figure 1A to Figure 1E The schematic diagram of the top view omits part of the film layer to clearly show the position of each component. Please refer to Figure 1A as well as Figure 2A , forming a scan line SL, a gate G and a gate insulating layer 110 on a substrate 102 . Specifically, a gate material layer may be formed by a sputtering process first, and then the scan lines SL and the gate G are defined by a patterning process. The patterning process is, for example, a photomask process, which includes steps such as photoresist coat, exposure, develop, etch, and strip. The material of the gate material layer includes chromium (Cr), ...
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