Methods of integrated shielding into MTJ device for MRAM
A technology of magnetic tunnel junction and shielding layer, which can be used in the manufacture/processing of electromagnetic devices, static memory, digital memory information, etc., and can solve problems such as unclear resistance state.
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[0034] Aspects of the invention directed to specific embodiments of the invention are disclosed in the following description and associated drawings. Alternative embodiments may be devised without departing from the scope of the present invention. Additionally, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the invention.
[0035] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term "embodiments of the invention" does not require that all embodiments of the invention include the discussed feature, advantage or mode of operation.
[0036] It should be noted that the terms "connected", "coupled" or any variations thereof mean any connection or coupling, direct or indirect, between two or more elemen...
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