Methods of integrated shielding into MTJ device for MRAM

A technology of magnetic tunnel junction and shielding layer, which can be used in the manufacture/processing of electromagnetic devices, static memory, digital memory information, etc., and can solve problems such as unclear resistance state.

Inactive Publication Date: 2013-12-11
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The magnetic flux 415 affects the polarity 132 of the magnetic field in the free layer 130, causing the resistance state to become less defined and, in some cases, opposite

Method used

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  • Methods of integrated shielding into MTJ device for MRAM
  • Methods of integrated shielding into MTJ device for MRAM
  • Methods of integrated shielding into MTJ device for MRAM

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Embodiment Construction

[0034] Aspects of the invention directed to specific embodiments of the invention are disclosed in the following description and associated drawings. Alternative embodiments may be devised without departing from the scope of the present invention. Additionally, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the invention.

[0035] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term "embodiments of the invention" does not require that all embodiments of the invention include the discussed feature, advantage or mode of operation.

[0036] It should be noted that the terms "connected", "coupled" or any variations thereof mean any connection or coupling, direct or indirect, between two or more elemen...

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Abstract

Methods and apparatus for shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.

Description

technical field [0001] The present invention relates generally to electronic devices, and more particularly, but not exclusively, to apparatus and methods for shielding non-volatile memory. Background technique [0002] Random access memory (RAM) is a ubiquitous component of modern digital architectures. RAM may be a separate device, or may be integrated in devices that use RAM, such as microprocessors, microcontrollers, application specific integrated circuits (ASICs), systems on chips (SoCs), and other similar devices. RAM can be volatile or non-volatile. Volatile RAM loses its stored information whenever power is removed. Non-volatile RAM maintains its stored content even when power is removed. Although non-volatile RAM has advantages (eg, the ability to retain its contents without applied power), conventional non-volatile RAM has slower read / write times than volatile RAM. [0003] Magnetoresistive Random Access Memory (MRAM) is a non-volatile memory technology that h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16H01L27/22H01L43/08H10B20/00H10B53/00H10B53/30H10B69/00
CPCH01L23/552H01L2924/0002G11C11/161H10N50/80H10N50/01H10N50/10H01L2924/00H10B53/00H10B53/30H10B61/22G11C11/16
Inventor 陈维川李霞升·H·康
Owner QUALCOMM INC
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