Memory device

A storage device, shift register technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as increased requirements

Active Publication Date: 2014-01-15
SK HYNIX INC
View PDF8 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the number of bits of the command signal and the address signal increases and the transmission speed of the command signal and the address signal becomes faster, the requirement to perform a parity check of the command signal and the address signal increases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory device
  • Memory device
  • Memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. However, this invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the description, reference numerals correspond directly to like parts in the different figures and embodiments of the present invention. In addition, a singular form may include a plural form as long as it is not specifically mentioned in a sentence.

[0021] figure 1 is a configuration diagram illustrating a memory device according to an embodiment of the present invention.

[0022] see figure 1 , the storage device includes: a clock control circuit 110 , a command shift circuit 120 , a decoder circuit 130 , a parity check circuit 14...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A memory device includes a parity circuit configured to detect presence or absence of an error using a plurality of command signals and a plurality of address signals, a command shift circuit configured to shift the plurality of command signals by a preset delay value in synchronization with a control clock, a clock control circuit configured to deactivate the control clock when there is no valid command signal in command signals being shifted in the command shift circuit, and a decoder circuit configured to decode a plurality of command signals output from the command shift circuit.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0066004 filed on June 20, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments of the present invention relate to a memory device, and more particularly, to a technique for detecting errors of commands and addresses. Background technique [0004] One of methods for checking errors of transmitted / received data is parity check. The parity check means an error check for setting the number of data having a value '1' in the received multi-bit data to one of even and odd, and checking that the received multi-bit data has a value Whether the data bit of '1' coincides with the even number or the odd number. For example, in the case of an even parity check, if the number of data having a value '1' is even in received multi-bit data, it is judged that there is no error, and if the numbe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/44
CPCG06F11/10G11C7/22G11C8/10G11C29/42
Inventor 宋清基
Owner SK HYNIX INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products