CMOS transistors and methods of forming them

Abstract

The invention discloses a CMOS transistor and a forming method thereof. A gate metallic layer is subjected to nitrogen injection by the implant process to form a nitride layer; the nitride layer can be well bonded to both the gate metallic layer and a mask layer which is formed later; accordingly, stability of the mask layer is improved greatly, peeling is avoided, and reliability of devices is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a CMOS transistor and a forming method thereof. Background technique [0002] With the continuous improvement of the existing technology, the industry has gradually transitioned from avoiding the use of CMOS transistors to using CMOS transistors. The formation process of CMOS transistors is usually to first form a sacrificial polysilicon gate, which acts in the initial processing process, and then replaces it with a CMOS transistor, which not only retains the advantages of polysilicon gates, but also has the advantages of metal in electrical properties. [0003] Currently, most CMOS transistors including P-type Metal Oxide Semiconductor Field Effect Transistors (PMOS) and N-type Metal Oxide Semiconductor Field Effect Transistors (NMOS) adopt metal gate structures. figure 1 Shown is a schematic diagram of a CMOS transistor in a prior art process. Described CMOS tr...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of CMOS transistor and its formation method, to solve the defect of peeling produced by existing technology

Images