Unlock instant, AI-driven research and patent intelligence for your innovation.

Bipolar junction transistor

A bipolar transistor and base technology, applied in transistors, semiconductor devices, electrical components, etc., can solve problems such as satisfaction, and achieve the effect of improving device performance

Active Publication Date: 2014-01-29
TAIWAN SEMICON MFG CO LTD
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, while existing approaches have largely achieved their intended purpose, they are not satisfactory in all respects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bipolar junction transistor
  • Bipolar junction transistor
  • Bipolar junction transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Several different embodiments are provided due to different features of the invention. The specific elements and arrangements in the present invention are for simplicity, but the present invention is not limited to these embodiments. For example, a description of forming a first element on a second element may include embodiments in which the first element is in direct contact with the second element, as well as embodiments having additional elements formed between the first element and the second element such that the second element An embodiment in which one element is not in direct contact with a second element. In addition, for the sake of brevity, the present invention is represented by repeated element symbols and / or letters in different examples, but it does not mean that there is a specific relationship between the various embodiments and / or structures.

[0043] figure 1 Is a flowchart of an embodiment of a method 100 for fabricating an integrated circuit devi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure provides a bipolar junction transistor (BJT) device and methods for manufacturing the BJT device. In an embodiment, the BJT device includes: a semiconductor substrate having a collector region, and a material layer disposed over the semiconductor layer. The material layer has a trench therein that exposes a portion of the collector region. A base structure, spacers, and emitter structure are disposed within the trench of the material layer. Each spacer has a top width and a bottom width, the top width being substantially equal to the bottom width.

Description

[0001] This application is a divisional application of a Chinese patent application with an application date of July 15, 2011, an application number of 201110210238.3, and an invention title of "Bipolar Transistor and Its Manufacturing Method". technical field [0002] The invention relates to a bipolar transistor, in particular to a bipolar transistor with spacers. Background technique [0003] A bipolar transistor (BJT) is a three-terminal device. The three pins include: a base terminal, a collector terminal, and an emitter terminal. Bipolar transistors are formed by placing p-n junctions in close proximity to each other, with a region common to both junctions. The first junction is between the base and the emitter, and the second junction is between the emitter and the collector. Depending on the properties of the semiconductor material used to form the bipolar transistor, a p-n-p or n-p-n transistor is formed. The pins of the bipolar transistor are in contact with its...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/73H01L29/732H01L29/737H01L29/08
CPCH01L29/66242H01L29/732H01L29/7378H01L29/66318H01L29/7371H01L29/66287H01L29/0821H01L29/20
Inventor 郭俊聪刘世昌蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD