Scrap collection device of slicer

A collection device and slicer technology, which is applied to fine working devices, stone processing equipment, manufacturing tools, etc., can solve the problems of different thickness of silicon wafers and can not meet the requirements, and achieve the effect of improving the distance

Inactive Publication Date: 2014-02-05
无锡荣能半导体材料有限公司
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Problems solved by technology

[0002] In the existing NTC PV800 slicer, the wire mesh is set directly above the fragment box, which is 840mm long, 200mm wide, and 400mm high; the distance between the two is about 3cm, and the gap is too large. When moving at high speed, t

Method used

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  • Scrap collection device of slicer

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Embodiment Construction

[0010] The present invention will be described in detail below in conjunction with the accompanying drawings. The description in this part is only exemplary and explanatory, and should not have any limiting effect on the protection scope of the present invention.

[0011] Such as figure 1 The fragment collection device of a slicer shown includes a fragment box 1 and a wire mesh 2, the wire mesh 2 is arranged directly above the fragment box 1, and the distance between the fragment box 1 and the wire mesh 2 is 10 mm to 25 mm . Preferably, the distance between the debris box 1 and the wire net 2 is 10 mm. At this time, the height of the debris box 1 is 420 mm.

[0012] Since the wire mesh 2 will produce a wire bow during the cutting process (that is, the silicon wafer will be bent downward when it is under pressure during cutting), the height of the fragment box 1 from the steel wire mesh 2 will be smaller than when there is no load, and the fragment box 1 and the wire mesh Th...

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Abstract

The invention discloses a scrap collection device of a slicer. The scrap collection device comprises a scrap box and a wire mesh, wherein the distance between the scrap box and the wire mesh is 10-25mm. According to the scrap collection device, the distance between existing scrap boxes and wire meshes is modified and is decreased by 2cm, most of scrap silicon wafers fall into the scrap box, and the ratio of TTV (Total Thickness Variation) greater than 50 is decreased; before replacing deep grooves, the TTV greater than 50 accounts for 3.5%, and after replacing the deep grooves, the TTV greater than 50 accounts for 1.08%, so that the ratio of the TTV greater than 50 is effectively decreased by 2.42%.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing equipment, in particular to a debris collection device of a slicer. Background technique [0002] In the existing NTC PV800 slicer, the wire mesh is set directly above the fragment box, which is 840mm long, 200mm wide, and 400mm high; the distance between the two is about 3cm, and the gap is too large. When moving at a high speed, the dropped silicon wafers will be brought to the surface of the main roller by the steel wire due to inertia to form jump wires, which will eventually result in different thicknesses of the cut out silicon wafers, which cannot meet the requirements. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the present invention proposes a fragment collection device of a slicer, which completely receives all fragments and avoids jumping wires. [0004] In order to achieve the purpose of the above invention, the present invention ...

Claims

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Application Information

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IPC IPC(8): B28D5/04
Inventor 刘耀峰潘振东
Owner 无锡荣能半导体材料有限公司
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