Method for monitoring thin-film growth based on total internal reflection polarized phase-difference measurement
A technology of thin film growth and total internal reflection, which can be used in the measurement of phase influence characteristics, measurement devices, instruments, etc., which can solve the problems of long measurement time and unfavorable real-time monitoring applications.
Active Publication Date: 2014-03-26
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology
However, in traditional ellipsometry, the ellipsometric parameters ψ and Δ are both unknown quantities, and a measurement requires polarizing elements such as rotating polarizers and analyzers, and the measurement time is long, which is not conducive to real-time monitoring applications
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[0037] Below in conjunction with example further elaborates the specific embodiment of the present invention.
[0038] The selected demonstration example is the growth monitoring of a low polarization sensitivity mirror, which is used to maintain the unpolarized state of the 60° reflected light. The specific requirement is to ensure that the ellipsometric parameter ψ of the 60° reflected in the 400-700nm band is Within the range of 45±0.2°, its design structure is as follows Figure 4 As shown, including reflective layer, transition layer and protective layer. The reflective layer is a silver film (Ag) with a thickness of 150nm, and the transition layer is an aluminum oxide film (Al 2 o 3), the refractive index is 1.68, the thickness is 10nm, and the protective layer is silicon dioxide film (SiO 2 ), the refractive index is 1.46, and the thickness is 34nm. For the growth monitoring of the film structure, the silver film of the reflective layer can use a crystal oscillator ...
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The invention discloses a method for monitoring thin-film growth based on the total internal reflection polarized phase-difference measurement, and belongs to the technical field of optical monitoring on thin-film growth. In the method, polarized phase-difference variation of incident light is used as a measurement target to reflect the variation of optical property during the thin-film growth, and a corresponding relation between optical signals and film thickness is built to complete the monitoring of the thin-film growth, to be specific, the method comprises the steps of performing theoretical calculation according to film system design parameters, drawing an expected variation curve of total internal reflection polarized phase-difference along with the thin-film growth, judging the thin-film growth thickness through actual optical monitor signal value, obtaining the distribution of the polarized phase-difference in a spectral region through spectrum scanning after finishing the growth of film layers, fitting for obtaining precise actual film layer refractive index and thickness so as to correct the film system design parameters, and performing thickness compensation among different film layers. The method has the advantages of high sensitiveness of the monitoring on the film layer refractive index and thickness, and high measuring speed.
Description
technical field [0001] The invention relates to the optical monitoring technology of film growth, in particular to a method for monitoring film growth based on total internal reflection polarization phase difference measurement. Background technique [0002] The quality of the optical properties of optical thin film growth depends on the precise grasp and control of the refractive index and thickness parameters of the grown film layer. The optical monitoring method can obtain the refractive index and thickness growth information of the film layer at the same time, and is considered to be one of the most effective methods in the growth monitoring of optical thin films. The monitoring signal used in traditional optical monitoring is the transmittance or reflectance of the growing film. The monitoring principle is that the transmittance or reflectance of the film changes with the thickness of the film layer. When the thickness of the film layer is regular, the monitoring signal...
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Login to View More IPC IPC(8): G01N21/41G01B11/06
Inventor 蔡清元刘定权罗海瀚郑玉祥陈刚张冬旭胡二涛
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI