A kind of thin film transistor, its manufacturing method, array substrate and display device

Abstract

The invention discloses a thin film transistor and a manufacturing method thereof as well as an array substrate and a display device thereof. A grid, a grid insulation part, an active part, a source and a drain of the thin film transistor are arranged on a substrate basal plate along the horizontal direction parallel with the substrate base plate while the existing thin film transistor is characterized in that the grid, the grid insulation layer, the source layer, the source and the drain are sequentially overlapped on the substrate basal plate. The thin film transistor provided by the embodiment of the invention is equal to that the existing thin film transistor is rotated by 90 degrees by taking the shorter edges of the occupied area, on the substrate basal plate, of the thin film transistor as the central axes, so the order of magnitude of the horizontal width of the occupied area, on the substrate basal plate, of the thin film transistor is reduced to 10<-10>m from 10<-6>m, the non-transmitting area of the thin film transistor on the substrate basal plate is reduced, the transmitting area is increased, the resolution of the display device when the aperture ratio of the display device is fixed is improved, and the aperture ratio of the display device when the resolution of the display device is fixed is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] Currently, existing thin-film transistors (TFTs), such as figure 1 As shown, it includes: a base substrate 101, which is located on the base substrate 101 and is sequentially stacked (that is, along the figure 1 The gate 102, the gate insulating layer 103, the active layer 104, and the source and drain 105 are arranged in the direction of the arrow shown); wherein, the gate 102 is insulated from the active layer 104 by the gate insulating layer 103, and the source and drain 105 includes The source electrode 106 and the drain electrode 107 are insulated from each other, and both the source electrode 106 and the drain electrode 107 are connected to the active layer 104 . [0003] In the above TFT structure, the lateral width of the area occupied by the T...

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Problems solved by technology

[0003] In the above TFT structure, the lateral width of the area occupied by the TFT on the base substrate (ie, as figure 1 Inward width of the vertical paper plane shown) is of the order of 10 -6 m, resulting in a larger area occupied by the TFT on the substrate substrate

In the display device with the above-mentioned TFT structure, when the aperture ratio of the display device is constant, the area of ​​the light-transmitting region of each pixel unit in the display device will also be larger, which will result in a lower resolution of the display device; When the resolution of the device is constant, the area of ​​the light-transmitting region of each pixel unit in the display device is constant, and the TFT occupies a large area on the substrate, which will lead to a low aperture ratio of the display device.

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