Linear capacitive microwave power sensor based on mems structure
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SOUTHEAST UNIV
- Publication Date
- 2016-06-29
- Estimated Expiration
- Not applicable ยท inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of microelectronic devices, and relates to a structure for measuring microwave power transmitted on a microstrip line. Background technique
[0002] In microwave technology research, microwave power is an important parameter to characterize microwave signal characteristics. In microwave wireless application and measurement technology, the detection of microwave power is a very important part. The traditional technology for measuring microwave power is based on thermistors, thermocouples or diodes, and these are terminal devices, and the microwave signal will be completely consumed in the power measurement. In recent years, three types of online microwave power sensor structures based on MEMS (Chinese) technology have been proposed at home and abroad: one is to use the ohmic loss on the coplanar waveguide signal line, and convert it into thermoelectric potential by placing a nearby thermal pile output; the ...