Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chip position calibration tool and calibration method, chemical vapor deposition reaction chamber

A chemical vapor deposition and reaction chamber technology, which is applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of inability to form a film layer on the chip, and the quality of the film layer is low, and achieves improved accuracy, The effect of reducing the failure rate and improving the accuracy

Active Publication Date: 2016-03-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, the quality of the film layer formed on the chip by the CVD method is not high, and in severe cases, the film layer cannot even be formed on the chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chip position calibration tool and calibration method, chemical vapor deposition reaction chamber
  • Chip position calibration tool and calibration method, chemical vapor deposition reaction chamber
  • Chip position calibration tool and calibration method, chemical vapor deposition reaction chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] refer to figure 1 , the chemical vapor deposition equipment 1 includes a transfer chamber 2, a plurality of chemical vapor deposition reaction chambers 3 and a plurality of gate valves, and a plurality of chemical vapor deposition reaction chambers 3 are respectively located outside the transfer chamber 2, and all pass through the gate valve and transfer Chamber 2 communicates. combined reference figure 1 and figure 2 , the transfer of the chip 5 between the transfer chamber 2 and the chemical vapor deposition reaction chamber 3 is realized by the manipulator 4 .

[0032] combined reference Figure 1 to Figure 5 After the manipulator 4 transfers the chip 5 to the chemical vapor deposition reaction chamber 3 , the chip 5 needs to complete the film deposition operation on the heater (Heater) 32 in the chemical vapor deposition reaction chamber 3 .

[0033] refer to figure 2 and image 3 , the heater 32 is a cylindrical structure, the top surface of the heater 32 h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a chip position aligning tool and an aligning method, and a chemical vapor deposition reaction cavity, wherein the chip position aligning tool is arranged on a heater of the chemical vapor deposition reaction cavity, a first groove is formed in the top surface of the heater, the opening edge of the first groove is greater than the bottom surface edge, and the bottom surface edge is round; the tool comprises a first planar surface, a second surface with a second groove which is relative to the first surface, the bottom surface of the first groove and the bottom surface of the first groove are opposite, the top of the heater is contained in the second groove, the first surface is provided with at least three arc-shaped sections which are in the same circle, and the round edge and the bottom surface edge are equal in size; at least three through holes on the circle penetrate through the first surface and the bottom surface of the second groove, the bottom surface edge is parallel to the first surface, and when the position of the tool meets the requirement, the at least three arc-shaped sections of the bottom surface edge of the first groove are connected with the at least three arc-shaped sections of the first surface end to end to form the circle. According to the tool, the arrangement difficult of a chip can be reduced, and the arrangement accuracy can be enhanced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a chip position calibration tool, a calibration method, and a chemical vapor deposition reaction chamber. Background technique [0002] In the field of semiconductors, methods of forming thin films on objects are generally classified into physical vapor deposition (PVD) methods and chemical vapor deposition (CVD) methods. Among them, PVD utilizes physical impact such as sputtering to form a thin film. CVD is the use of chemical reactions to form thin films. [0003] The CVD method refers to a method of applying RF power to a reaction gas injected into a reaction chamber to bring the reaction gas into a plasma state, and deposit radicals in the plasma to form a film on a chip. [0004] In the prior art, the quality of the film layer formed on the chip by the CVD method is not high, and in severe cases, the film layer cannot even be formed on the chip. Contents of the invention ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/458C23C16/52C23C16/54
Inventor 郑修锋解毅何雅彬朱义党胡可绿王华钧忻圣波
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com