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Ion implantation device, beam parallelization device and ion implantation method

An ion implantation device, ion beam technology, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve problems such as non-interchangeability

Active Publication Date: 2017-04-19
SENCORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is considered that different types of devices are not interchangeable in the use of ion implantation devices (such as semiconductor manufacturing processes)

Method used

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  • Ion implantation device, beam parallelization device and ion implantation method
  • Ion implantation device, beam parallelization device and ion implantation method
  • Ion implantation device, beam parallelization device and ion implantation method

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Embodiment Construction

[0038] Hereinafter, modes for implementing the present invention will be described in detail with reference to the drawings. In addition, in description of drawings, the same code|symbol is attached|subjected to the same element, and repeated description is abbreviate|omitted suitably. Moreover, the structures described below are examples, and are not intended to limit the scope of the present invention in any way. For example, in the following, a semiconductor wafer will be described as an example of an ion-implanted object, but other substances or members may also be used.

[0039] First, the procedure to achieve the embodiment of the present invention described later will be described. The ion implanter can select the type of ion to be implanted, and set its energy and dose according to the required characteristics to be built in the workpiece. Generally, ion implantation apparatuses are classified into several types according to the energy and dose range of implanted ion...

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Abstract

The invention provides an ion injection device, a beam parallelization device and an ion injection method. The ion injection device (700) comprises a beam parallelization part (704) and a third power supply part (726). The beam parallelization part (704) comprises an acceleration lens (706) and a deceleration lens (708) which is disposed adjacent to the acceleration lens (706) along the ion beam conveying direction. The third power supply part (726) enables the beam parallelization part (704) to move under any energy settings. The plurality of energy settings comprise a first energy setting suitable for the conveying of low-energy ion beam and a second energy setting suitable for the conveying of high-energy ion beam. The third power supply part (726) is configured in that potential difference is generated at the acceleration lens (706) under the second energy setting, and potential difference is generated at the deceleration lens (708) of the first energy setting. The curve of the deceleration lens (708) is flatter than that of the acceleration lens (706).

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2012-249662 filed on November 13, 2012 and Japanese Patent Application No. 2013-177626 filed on August 29, 2013. The entire content of the application is incorporated in this specification by reference. [0002] The present invention relates to an ion implantation, and more specifically, to an ion implantation device and an ion implantation method. Background technique [0003] An ion source and its power supply are connected to an ion implantation device to extract an ion beam with a relatively small beam current from the ion source (for example, refer to Patent Document 1). In this device, the connection between the ion source and the power supply can be changed, so as to extract the ion beam with a larger beam current from the ion source. [0004] Another ion implantation device has an ion source, an accelerating tube, and an electrical circuit connected to their power sourc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01J37/248H01J37/30
Inventor 八木田贵典椛泽光昭佐佐木玄
Owner SENCORP