Unlock instant, AI-driven research and patent intelligence for your innovation.

Sputtering apparatus and method

A deposition device and target material technology, applied in sputtering coating, vacuum evaporation coating, coating, etc., can solve problems such as expensive single-chip target material, difficult to manufacture and handle, and prone to flaws in single-chip target material

Active Publication Date: 2014-05-28
APPLIED MATERIALS INC
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, monolithic targets with the required dimensions for large substrates are expensive and difficult to fabricate and handle
Furthermore, monolithic targets are prone to imperfections due to the extension of the deposited material over the entire length of the target

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sputtering apparatus and method
  • Sputtering apparatus and method
  • Sputtering apparatus and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Reference will now be made in detail to various embodiments of the invention, one or more examples of which are illustrated in the accompanying drawings. In the drawings, the same reference numerals refer to the same elements. In general, only the differences in the respective embodiments are described. Each example is provided by way of explanation of the invention, and each example is not intended to limit the invention. Furthermore, features illustrated or described as part of one embodiment can be used on or in combination with other embodiments to yield yet a further embodiment. These descriptions are intended to cover such modifications and variations.

[0019] figure 1 A schematic diagram of a deposition chamber 100 according to an embodiment is shown. The deposition chamber 100 is suitable for a deposition process, such as a PVD process. The substrate 110 is shown positioned on the substrate support 120 . According to some embodiments, the substrate suppor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
areaaaaaaaaaaa
Login to View More

Abstract

A deposition apparatus for depositing a layer of deposition material on a substrate is provided. The apparatus includes a substrate support adapted for holding the substrate; a target support (520) adapted for holding a target assembly. The target assembly includes a backing element and at least two target elements (510, 511) arranged on the backing element next to each other so that a gap (530) is formed between the at least two target elements. The gap between the target elements has a width (w). Further, the substrate support and the target support are arranged with respect to each other so that the ratio of distance between substrate and target (570) element to the gap width (w) is about 150 or greater.

Description

technical field [0001] Embodiments of the present invention relate to a deposition device and a method for forming a deposition material layer on a substrate. In particular, embodiments of the invention relate to deposition apparatus having multi-tile target supports, and methods for positioning targets. Background technique [0002] Several methods are known for depositing materials on a substrate. For example, a physical vapor deposition (PVD) process, such as a sputtering (sputter) process, may be used to coat a substrate. Other deposition processes include chemical vapor deposition (Chemical Vapor Deposition, CVD), plasma enhanced chemical vapor deposition process (Plasma Enhanced Chemical Vapor Deposition, PECVD), etc. Generally speaking, the above process is performed in a process device or chamber, and the substrate to be coated is placed in the process device or chamber. Deposition material is provided in this apparatus. When performing a PVD process, the deposite...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34H01J37/34
CPCC23C14/3407H01J37/34H01J37/3417H01J37/3414C23C14/50H01J37/3435
Inventor E·谢尔O·格劳
Owner APPLIED MATERIALS INC