Systems and methods of storing data

A data and data page technology, applied in information storage, read-only memory, static memory, etc., can solve the problem that logical pages affect flash memory access methods and performance

Active Publication Date: 2014-05-28
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unequal reliability of logical pages may affec

Method used

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  • Systems and methods of storing data

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Embodiment Construction

[0041] By using a multi-stage decoding concatenated code construction, an efficient encoding scheme that provides a good trade-off between reliability, access time and complexity can be implemented at flash memory. Such a code construction enables efficient access to small amounts of data by individually protecting each small amount of data using word codes stored as short sub-words in flash memory. A subcode may include data and parity bits that provide redundancy to protect the data. The subword can later be read from flash, passed to the flash controller, and decoded to retrieve the data for that subcode. Reading the subwords individually and decoding the subcodes enables faster read performance for random read requests of the flash memory compared to reading and decoding the entire codeword to access the data. If decoding a subcode fails because there are too many errors in the subword, a longer codeword can be read from flash memory, passed to the controller and decoded ...

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Abstract

Systems and methods of storing data are disclosed.

Description

technical field [0001] The present disclosure generally relates to storing data at memory. Background technique [0002] Non-volatile memory devices such as Universal Serial Bus (USB) flash memory devices or removable memory cards have allowed for increased portability of data and software applications. Flash memory devices can improve cost efficiency by storing multiple bits in each flash memory cell. For example, multi-level cell (MLC) flash memory devices provide increased storage density by storing 3 bits or more per cell. [0003] Storing multiple bits of information in a single flash cell typically involves mapping a sequence of bits to the state of the flash cell. For example, a first sequence of "110" bits may correspond to a first state of a flash memory cell, and a second sequence of "010" bits may correspond to a second state of a flash memory cell. After determining that a sequence of bits is to be stored in a particular flash memory cell, that flash memory ce...

Claims

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Application Information

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IPC IPC(8): G06F11/10
CPCG06F11/1068G11C2211/5641G11C7/1006G11C11/5642G11C11/5628G06F11/1072G06F11/1044G11C16/0483G11C16/10G11C29/78
Inventor E.沙伦I.埃尔罗德S.利茨恩M.拉瑟
Owner SANDISK TECH LLC
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