Preparation method of fes2 thin film

A thin film, fe2o3 technology, applied in the field of FeS2 thin film and its preparation, can solve the problems of low photoelectric conversion efficiency and poor light absorption performance, and achieve the effect of increasing effective light absorption area, improving photoelectric conversion efficiency, and enhancing light absorption performance
CN103872186BInactive Publication Date: 2016-05-11ZHEJIANG UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHEJIANG UNIV
Publication Date
2016-05-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a preparation method of a FeS2 thin film. The method includes the first step of using FTO conductive glass as a substrate, the second step of forming uniform and transparent seed layer solution, the third step of forming a uniform ZnO nanometer crystal seed layer on the surface of the substrate, the fourth step of preparing precursor solution, the fifth step of forming a uniform and dense ZnO nanorod array on the surface of the substrate, the sixth step of placing the substrate provided with the ZnO nanorod array into the precursor solution in a reaction still for hydrothermal reaction, and forming a ZnO / Fe2O3 core-shell structure nanorod array on the surface of the substrate, the seventh step of obtaining a Fe2O3 nanotube array on the surface of the substrate, and the eighth step of carrying out in-situ sulphur treatment on the Fe2O3 nanotube array and converting the Fe2O3 nanotube array to a FeS2 nanotube array. The FeS2 thin film comprises the FTO conductive glass substrate, the substrate is covered with the FeS2 nanotube array, and each FeS2 nanotube is formed by accumulating FeS2 particles. The method has the advantages that the effective light absorption area of the FeS2 thin film can be increased, so that the light absorption performance and the photoelectric conversion efficiency of the FeS2 thin film are improved.
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Description

technical field

[0001] The invention relates to the field of photoelectric materials and new energy technologies, in particular to a FeS 2 Thin films and methods for their preparation. technical background

[0002] With the outbreak of the economic crisis in 2008 and the intensification of Sino-US photovoltaic trade frictions, the development of the global photovoltaic industry has slowed down and faced a serious crisis, causing most photovoltaic companies to go bankrupt or bear heavy economic burdens. The root cause is cost. Therefore, cost reduction is an important factor that must be considered for any solar material. At this stage, the conversion efficiency of crystalline silicon solar cells is undoubtedly the highest, and it still occupies a dominant position in large-scale applications and industrial production. However, the high cost of raw silicon and the scarcity of resources have limited the future development of silicon solar cells, and at the same time, compou...

Claims

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