Preparation method of fes2 thin film
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHEJIANG UNIV
- Publication Date
- 2016-05-11
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of photoelectric materials and new energy technologies, in particular to a FeS 2 Thin films and methods for their preparation. technical background
[0002] With the outbreak of the economic crisis in 2008 and the intensification of Sino-US photovoltaic trade frictions, the development of the global photovoltaic industry has slowed down and faced a serious crisis, causing most photovoltaic companies to go bankrupt or bear heavy economic burdens. The root cause is cost. Therefore, cost reduction is an important factor that must be considered for any solar material. At this stage, the conversion efficiency of crystalline silicon solar cells is undoubtedly the highest, and it still occupies a dominant position in large-scale applications and industrial production. However, the high cost of raw silicon and the scarcity of resources have limited the future development of silicon solar cells, and at the same time, compou...