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Two-dimensional layered material saturable absorber device and its preparation method

A saturable absorption, two-dimensional layered technology, applied in laser parts, lasers, electrical components, etc., can solve the problems of limited saturable absorption bandwidth, non-uniformity, difficult to control accurately, etc., and achieve easy integration and high conversion efficiency. , the effect of low production cost

Active Publication Date: 2017-02-08
南京科耐激光技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with graphene, the inhomogeneous chiral nature of SWCNTs makes it difficult to precisely control the properties of saturable absorbers and limits the bandwidth of saturable absorbers.

Method used

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  • Two-dimensional layered material saturable absorber device and its preparation method
  • Two-dimensional layered material saturable absorber device and its preparation method
  • Two-dimensional layered material saturable absorber device and its preparation method

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Embodiment Construction

[0032] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0033] refer to figure 1 As shown, a two-dimensional layered material saturable absorber device includes a substrate, and the substrate is a high reflective mirror 5 coated with a back electrode 41, and the high reflective mirror 5 has the ability to laser from visible light to near-infrared band More than 95% reflectivity.

[0034] A dielectric layer 3 and a two-dimensional layered saturable absorbing material 2 are sequentially arranged on the high reflection mirror 5, the dielectric layer 3 is made of silicon dioxide, titanium dioxide or aluminum oxide, and its thickness is 20-400nm; the two-dimensional Layered saturable absorbing materials 2 are graphene, silicene, WS 2 、MoS 2 、 Bi 2 Te 3 、 Bi 2 Se 3 or Sb 2 Te 3 ; The two-dimensional layered saturable absorbing material 2 is graphene, silicene, WS 2 、MoS 2 、 Bi 2 Te ...

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Abstract

The invention discloses a two-dimensional stratified material saturable absorber device which comprises a substrate. The substrate is a high reflection mirror plated with a back electrode, a dielectric layer and a two-dimensional stratified saturable absorption material are arranged on the high reflection mirror in sequence, an electrode is arranged on the two-dimensional stratified saturable absorption material in an evaporation mode, a voltage source is arranged between the electrode and the back electrode, an optical fiber pigtail is arranged above the two-dimensional stratified saturable absorption material, and the saturable absorption device is attached to the optical fiber pigtail. According to a method, the advantages of a two-dimensional stratified saturable absorber are inherited, such as high performance, low manufacturing cost and easy combination, and CW light and Pulse light can be switched over fast by adjusting grid voltages and freely adjusting the starting threshold value of a laser locking mold.

Description

technical field [0001] The invention relates to the field of fiber lasers, in particular to a two-dimensional layered material saturable absorber device and a preparation method thereof, in particular to a saturable absorber device used for Q-switching, mode-locking, and optical signal processing in fiber lasers and its preparation method. Background technique [0002] In recent years, as a substitute for bulk solid-state lasers, mode-locked fiber lasers are widely used in micromachining, Optical communication, medical treatment, scientific research and many other fields have attracted widespread attention and applications. Among them, the mode-locked device is an important part of the mode-locked fiber laser, and its characteristics directly affect the performance of the laser. Currently on the market, the mode-locking devices used in mode-locked fiber lasers are mainly semiconductor saturable absorber mirrors (SESAM) based on III-V semiconductors. However, SESAM has man...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/098
Inventor 鲍小志鲍桥梁
Owner 南京科耐激光技术有限公司
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