Joint optimization method of photolithography machine light source and mask
A joint optimization and lithography machine technology, which is applied in the field of lithography machines, can solve problems such as increasing the complexity of optimization methods, analytical expressions that are difficult to solve, and cannot be solved.
Active Publication Date: 2015-09-16
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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With the continuous improvement of the complexity of the forward lithography imaging model and the evaluation function expression, the analytical expression of the evaluation function gradient is difficult or even impossible to solve, which increases the complexity of the optimization method
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[0037] The present invention will be further explained below in conjunction with the embodiments and figures, but this embodiment should not limit the scope of protection of the present invention, but for those skilled in the art, without departing from the principle of the present invention, several Replacement and improvement, these should also be regarded as belonging to the protection scope of the present invention.
[0038] Refer to figure 1 , figure 1 It is the principle diagram of the lithography machine system of the method for optimizing the light source mask of the lithography machine used in the present invention. It can be seen from the figure that the method involved in the method includes the light source illumination mode 1 generated by the lithography machine illumination system, and the mask pattern 2. Mask stage 3 and photoresist 4 of mask pattern 2. Refer to figure 2 , figure 2 It is a schematic diagram of the initial light source lighting mode used in the pr...
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The invention discloses a light source and mask optimization method for a lithography machine. The method comprises the following steps: taking the square of Euclidean distance between an ideal pattern and a photoresist image which corresponds to the mask under exposure of the current light source illumination mode as an evaluation function by utilizing a pixilated light source illumination mode and a mask, calculating gradient information of the evaluation function by utilizing a stochastic parallel gradient descent algorithm, guiding the light source and mask optimization process through the gradient information of the evaluation function, and thus obtaining the optimal light source illumination mode and mask pattern. According to the method, solution of a gradient analysis expression of the evaluation function is avoided, the optimization complexity is reduced, the optimization efficiency is improved, and the resolution ratio of the lithography machine is effectively improved.
Description
Technical field [0001] The invention relates to a photoetching machine, in particular to a method for joint optimization of a light source and a mask of the photoetching machine. Background technique [0002] Lithography is one of the core technologies of very large scale integrated circuit manufacturing. The lithography resolution determines the feature size of the integrated circuit pattern. When the exposure wavelength and numerical aperture are fixed, to continue to improve the lithography resolution, the process factor must be reduced by improving the photoresist process and adopting resolution enhancement technology. The light source and mask joint optimization (Source Mask Optimization, hereinafter referred to as SMO) technology is a new resolution enhancement technology newly developed in recent years, which optimizes the light source illumination mode and mask pattern at the same time. Compared with the optical proximity effect correction technology, it increases the f...
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IPC IPC(8): G03F7/20G03F1/76
Inventor 李兆泽李思坤王向朝
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI