A method and system for calculating the parasitic capacitance of a single-layer solenoid
A technology of parasitic capacitance and calculation method, applied in the fields of calculation, electrical digital data processing, special data processing applications, etc., can solve the problems of reducing the quality factor, affecting the self-resonant frequency, and difficult to accurately calculate the scope of application
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[0047] The calculation method of the present embodiment is divided into four steps to carry out:
[0048] The first step is to obtain the parameters H, R, N, and d of the solenoid. A model of a solenoid with a longitudinal section view such as Figure 2~3 Shown, and the definition of each parameter is shown in Table 1.
[0049] Table 1 Definition of parameters of the solenoid
[0050] parameter
definition
R
Radius of the solenoid
N
Number of turns of the solenoid
H
Solenoid Height
d
Wire Diameter of Solenoid
Y
Turn spacing of a solenoid
ε 0
Vacuum permittivity
[0051] In the second step, the intermediate parameter Y of the solenoid is calculated. It is known from Table 1 that the parameter Y is the turn spacing of the solenoid, and its calculation is shown in formula (1).
[0052] Y = H N - - - ...
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