System and method for performing address-based SRAM access assists

An address and memory access technology, applied in information storage, static memory, digital memory information, etc., can solve problems such as consumption, large power, and large auxiliary circuits

Inactive Publication Date: 2014-07-23
NVIDIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can lead to assist circuits that are relatively large and consume a lot of power

Method used

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  • System and method for performing address-based SRAM access assists
  • System and method for performing address-based SRAM access assists
  • System and method for performing address-based SRAM access assists

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Embodiment Construction

[0022] As technology has advanced, SRAM devices have become smaller and operating voltages have decreased, which provides power savings and performance improvements. However, as these parameters are reduced, the inherent variability in manufacturing tolerances and operating conditions has a greater potential to negatively affect device performance. In particular, these improvements allow storage of memory states with lower charge levels. However, this can increase the likelihood that the device will be adversely affected by noise sources (eg, ambient electromagnetic noise, noise radiated by other system components, power supply noise, etc.), by leakage currents, and the like. Specific design challenges include the ability to ensure reliable reading from and writing to cells and avoid inadvertent corruption of memory state during read and write operations.

[0023] Voltage assist can be used to address these challenges and ensure successful operation in the face of reduced vol...

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Abstract

A method and a system are provided for performing address-based memory access assist. An address is received for a memory access and a determination is made, based on the address, that access assist is enabled for at least one storage cell corresponding to the address. The access assist is applied to the at least one storage cell to perform the memory access.

Description

[0001] This invention was made with Government support under LLNS Subcontract B599861 issued by DOE and with Government support under Agreement HR0011-13-3-0001 issued by DARPA. The government has certain rights in this invention. [0002] priority statement [0003] This application is a continuation-in-part of US Patent Application No. 13 / 748,499 (Attorney Docket NVIDP860 / SC-12-0334-US1 ), filed January 23, 2013, the entire contents of which are incorporated herein by reference. technical field [0004] The present invention relates to memory circuits, and more particularly, to access assistance. Background technique [0005] Static Random Access Memory (SRAM) arrays are sometimes designed to include voltage assist circuits to improve performance. In particular, voltage assist can improve the ability to read from and write to SRAM cells, and can prevent stored values ​​from being inadvertently flipped during read and write operations. Existing assistance mechanisms are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/413
CPCG11C7/12G11C8/08G11C11/417G11C11/418G11C11/419G11C2029/4402G11C29/52
Inventor 马哈茂德·埃尔辛·西纳格尔威廉·J·达利
Owner NVIDIA CORP
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