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Etching method of multilayer film

A multi-layer film and etching technology, which is applied in the manufacture of discharge tubes, electrical components, semiconductors/solid-state devices, etc., can solve the problems of etching speed deviation, inability to adjust the intensity distribution of horizontal magnetic field components, and inability to adjust the plasma density distribution, etc., to achieve Effect of suppressing variation in etching rate

Active Publication Date: 2014-07-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, in the plasma processing apparatus described in Patent Document 1, since the positions of the plurality of permanent magnets are fixed, the intensity distribution of the horizontal magnetic field component cannot be adjusted.
Therefore, it is impossible to adjust the density distribution of the plasma according to the etching of each film of a multilayer film composed of a plurality of films with different film types and film thicknesses.
As a result, the etching rate of each film may vary at different positions in the radial direction from the center of the film.

Method used

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  • Etching method of multilayer film
  • Etching method of multilayer film
  • Etching method of multilayer film

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1～ experiment example 3 and comparative experiment example 1～ comparative experiment example 3

[0088] Hereinafter, Experimental Example 1 to Experimental Example 3 and Comparative Experimental Example 1 to Comparative Experimental Example 3 performed using the plasma processing apparatus 10A will be described. Experimental Example 1 was assumed to be Step S1, and an oxide film formed in the same manner on a substrate with a diameter of 300 mm was etched using a plasma processing apparatus 10A. The conditions of Experimental Example 1 are as follows.

[0089] Conditions of Experimental Example 1

[0090] High frequency power: 100MHz, 1000W

[0091] High Frequency Bias Power: 3.2MHz, 300W

[0092] The pressure of the processing space: 15mTorr (2Pa)

[0093] Process gas: CHF 3 (500sccm), O 2 (10 sccm)

[0094] Coil supplied with current: Coil 64

[0095] In addition, for comparison, Comparative Experimental Example 1 was also carried out. The difference between Comparative Experimental Example 1 and Experimental Example 1 is that no magnetic field is formed by the...

experiment example 2

[0097] Conditions of Experimental Example 2

[0098] High frequency power: 100MHz, 2400W

[0099] High Frequency Bias Power: 3.2MHz, 200W

[0100] The pressure of the processing space: 30mTorr (4Pa)

[0101] Process gas: N 2 (45 sccm), O 2 (22 sccm), CH 4 (180 sccm)

[0102] Coil supplied with current: Coil 62

[0103] In addition, for comparison, Comparative Experimental Example 2 was also carried out, and the difference between Comparative Experimental Example 2 and Experimental Example 2 is that the magnetic field was not formed by the electromagnet 30A.

[0104] In addition, Experimental Example 3 was assumed to be Step S3, and an oxide film formed in the same manner on a substrate with a diameter of 300 mm was etched using the plasma processing apparatus 10A. The conditions of Experimental Example 3 are as follows. In addition, the value of the current supplied to the coil 64 in Experimental Example 3 was larger than the value of the current supplied to the coil...

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Abstract

In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.

Description

technical field [0001] The invention relates to an etching method of a multilayer film. Background technique [0002] Plasma etching of an object to be processed is an important technique for manufacturing devices. In the plasma etching process, in order to control the distribution of the etching rate of the object to be processed, it is necessary to control the density distribution of the plasma in the processing space. As a technique for controlling the density distribution of plasma, there is known a technique for controlling the density distribution of plasma by generating a magnetic field in a processing space where an electric field exists. Such a technique is described in Patent Document 1, for example. [0003] The plasma processing apparatus described in Patent Document 1 is a parallel plate type plasma processing apparatus having an upper electrode and a lower electrode. This plasma processing apparatus generates a magnetic field that is symmetrical in a radial ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01J37/32165H01J37/3266H01J37/32669H01L21/3081H01L21/31116H01L21/31138
Inventor 桧森慎司伊藤悦治横田聪裕草野周石塚博昭永关一也
Owner TOKYO ELECTRON LTD