Unlock instant, AI-driven research and patent intelligence for your innovation.

Support including electrostatic substrate carrier

A substrate carrier, electrostatic substrate technology, applied in the field of ion implantation, can solve the problems of substrate contamination, pin melting, etc.

Active Publication Date: 2016-10-05
ION BEAM SERVICES
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can lead to melting of the pins and contamination of the backside of the substrate, especially if the bias is pulsed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Support including electrostatic substrate carrier
  • Support including electrostatic substrate carrier
  • Support including electrostatic substrate carrier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The invention thus seeks to establish an electrical contact between the carrier surface of the substrate carrier and the shoulder of the substrate carrier.

[0052] refer to figure 2 , in the first embodiment, the above-mentioned substrate carrier 20 is used again.

[0053] The first metal strip 201 is arranged on a ring 22 present on the periphery of the top surface 22 of the substrate carrier 20 . It is produced in so-called "thin-layer" technology, for example by using materials such as titanium, titanium nitride, platinum, tungsten or tungsten carbide. In any case, it needs to be a conductive material and, if possible, it should be resistant to high temperatures.

[0054] The thickness of the strip must be sufficient to exhibit acceptable resistance, but it must not be too large to ensure that the substrate does rest on the post 24 . A suitable value for this thickness lies between 1 μm and 2 μm.

[0055] A second metal strip 202 is deposited on the cylindrical...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a support comprising: an electrically conductive biasing stage; an insulating electrostatic substrate carrier 20 in the form of a cylinder having a shoulder 21, the bottom surface of the substrate carrier 20 facing the biasing stage, and its top surface 22 presents a carrying surface arranged to receive a substrate; a conductive clamping ring for fastening said shoulder 21 on said biasing table, and furthermore, the support comprises a means for connecting the carrying surface to the shoulder At least one conductive element 201-202-203 on 211.

Description

technical field [0001] The invention relates to supports comprising electrostatic substrate carriers. [0002] The field of the invention is that of processing components mounted on supports and subjected to heating in a low-pressure atmosphere. [0003] This mainly concerns microelectronic devices where the part being processed is the substrate. In particular, the invention relates to ion implantation enabling the implantation of impurities within a substrate: a technique known as "doping". Doping is used to modify certain properties of the substrate, these being mechanical properties, thermal properties, electrical properties, hydrophobic properties, etc. Background technique [0004] Currently, to perform such implants, ion implanters operating in plasma immersion mode can be used. Therefore, implanting ions in the substrate consists in immersing the substrate in the plasma and, for the purpose of establishing an electric field capable of accelerating the ions of the p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H02N13/00H01L21/67
CPCH01L21/67069H01L21/67248H01L21/6831H01L21/6833C23C14/48C23C14/50
Inventor F·托瑞格罗萨L·洛克斯
Owner ION BEAM SERVICES