Method for conducting curve fitting through temperature model
A curve fitting and model technology, applied in special data processing applications, instruments, electrical and digital data processing, etc., can solve the problems of model accuracy loss and device curve fitting difficulties, and achieve the effect of improving accuracy
Active Publication Date: 2014-09-03
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0007] The present invention solves the problem of difficulty in device curve fitting under high temperature and low temperature conditions, which brings great loss to the accuracy of the model, thereby providing a technical solution for a method of curve fitting using a temperature model
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[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0023] Such as figure 1 As shown, the present invention provides a kind of method that adopts temperature model to carry out curve fitting, comprises the following steps:
[0024] Step 1. Measure the characteristic curves of the devices in the preset temperature range respectively. The preset temperature range is: -40°C ~ 125°C. The characteristic curves include: the transfer characteristic curve (IDVG) of the MOS tube, the output characteristic curve (IDVG) of the MOS tube ), transconductance characteristic curve (GM), output resistance characteristic curve (ROUT), output conductance characteristic curve (GDS) and gate current characteristic curve (IG), etc.
[0025] Step 2. Obtain the temperature coefficients of various performance indicators according to the measured characteristic curves. T...
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The invention discloses a method for conducting curve fitting through a temperature model, and relates to the field of semiconductor characterization or modeling. The method includes the steps of measuring various characteristic curves of a device within a preset temperature range, calculating temperature coefficients of various characteristic indexes according to the characteristic curves, establishing the temperature effect model according to the temperature coefficients, conducting curve fitting on the characteristic curves of the device according to the temperature effect model to obtain the curve fitting accuracy, judging whether the curve fitting accuracy obtained through fitting is within a preset accuracy range of the test characteristic curves of the device or not, if yes, ending the process, and if not, adjusting the temperature effect model established according to the temperature coefficients. According to the method, by measuring the characteristic curves, within the preset temperature range, of the device, the device curve fitting is made more accurate when the device is at the temperature ranging from -40 DEG C to 125 DEG C, and the work accuracy of a device model under the high temperature condition and the low temperature condition is greatly improved.
Description
technical field [0001] The invention relates to the field of semiconductor device characterization or modeling, in particular to a method for curve fitting using a temperature model. Background technique [0002] With the advancement of integrated circuit process technology, the critical dimensions of CMOS devices are getting smaller and smaller, and the secondary effects of devices have an increasing impact on device characteristics. Conventional global models (such as BSIM4) have been difficult to accurately characterize device characteristics, so the industry began to use local parameters (binning) extensively to improve the curve fitting accuracy in the modeling process. This method of introducing local parameters is very helpful for fitting the characteristic curve of the device at room temperature (25°C). However, for temperature effects, conventional models are usually based on the discovered physical mechanism of semiconductors, and only provide a small number of te...
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IPC IPC(8): G06F17/50
Inventor 商干兵俞柳江范茂成程嘉
Owner SHANGHAI HUALI MICROELECTRONICS CORP