Verification platform and test method of field effect transistor soa curve

Abstract

The verification platform of the field effect transistor SOA curve of the present invention includes a control unit, a monitoring unit and a power source; the control unit includes a single-chip microcomputer, a switch, a first operational amplifier and a second operational amplifier connected in sequence, and a source access terminal of a device to be tested Connect a precision power resistor with a resistance value of 1R; the input terminal of the monitoring unit is respectively connected to the drain voltage and the voltage drop of the precision power resistor; the serial input port of the microcontroller is connected to a switch that is grounded at one end, and the serial output port passes through the second resistor Connect the inverting input terminal of the first operational amplifier, the output terminal of the first operational amplifier is connected to the negative input terminal of the second operational amplifier, and the output terminal of the second operational amplifier is connected to the gate access terminal of the device under test through the seventh resistor ; The output terminal of the first operational amplifier is connected to one fixed terminal of the variable resistor, the other fixed terminal is grounded, and the adjustment terminal is connected to the reverse input terminal of the second operational amplifier through the fourth resistor. Based on the test method of the SOA curve of the verification platform of the present invention, the steps are as follows, preset value; test.

Description

technical field [0001] The invention relates to the test of a field effect transistor, in particular to a verification platform and a test method of the SOA curve of the field effect transistor. Background technique [0002] At present, the SOA curve of field effect transistors cannot be drawn by point-by-point testing. The SOA curves provided by various manufacturers are obtained through the following indirect methods: first test the thermal resistance parameters of the product based on: thermal resistance = Δ temperature / power, use The relationship between thermal resistance, power and temperature is back calculated. The result is a theoretical value, and there will be deviations from the actual value, which will inevitably lead to burnt chips in the actual use of the client, especially when the product is used at the critical point of the SOA curve. In the area, the risk of burning chips will be greatly increased; therefore, users urgently need a platform and test metho...

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Problems solved by technology

[0002] At present, the SOA curve of field effect transistors cannot be drawn by point-by-point testing. The SOA curves provided by various manufacturers are obtained through the following indirect methods: first test the thermal resistance parameters of the product based on: thermal resistance = Δ temperature / power, use The relationship between thermal resistance, power and temperature is back calculated. The result is a theoretical value, and there will be deviations from the actual value, which will inevitably lead to burnt chips in the actual use of the client, especially when the product is used at the critical point of the SOA curve. In the region, the risk of burning chips will be greatly increased; therefore, users urgently need a platform and test method that can visually verify the electrical performance of field effect transistors at actual use parameter points

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