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Top-extended cross-type terahertz absorption structure and its applications

An absorption structure, cross-shaped technology, applied in the field of terahertz wave detection, can solve the problems of inability to combine micro-bridge structures, large antenna size and structure, and achieve the effects of small size, easy integration, and simple and reasonable preparation process.

Active Publication Date: 2015-12-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

On the basis of planar microbolometers, CEA-LETI has begun to develop THz imaging based on infrared microbolometers tuned to THz waves, but the size and structure of the antennas they involve are relatively large and cannot be compared with microbridges. structure combined

Method used

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  • Top-extended cross-type terahertz absorption structure and its applications
  • Top-extended cross-type terahertz absorption structure and its applications
  • Top-extended cross-type terahertz absorption structure and its applications

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Embodiment Construction

[0026] The cross-shaped terahertz wave absorption structure with extended top proposed by the present invention is characterized in that the top layer is a cross-shaped metal pattern with extended top, the middle layer is a dielectric layer, and the bottom layer is a metal reflection layer.

[0027] Prepare a metal reflective layer made of aluminum by magnetron sputtering on the silicon wafer, the thickness of the reflective layer is in the range of 0.1-0.5μm; use automatic glue coating track on the metal reflective layer to coat the dielectric layer with polyimide , the thickness of the dielectric layer is 1.9 μm; on the dielectric layer, use PECVD equipment and mixed frequency sputtering technology to make a low-stress silicon nitride protective layer, and the thickness of the prepared silicon nitride layer is in the range of 0.1-1 μm; on the protective layer On silicon nitride, AZ5214 photoresist is used to prepare the top-extended cross-shaped structure of aluminum, and the...

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Abstract

The invention discloses a top-end-extended cross terahertz absorption structure and an application thereof. The structure is characterized in that a common cross metamateiral structure is changed to be a top-end-extended cross metamaterial structure. Compared with the common cross metamaterial structure, the top-end-extended cross metamaterial structure is smaller in size, achieves zooming from 60mum to 30mum and achieves identical frequency terahertz radiation absorption. By means of the structure, the antenna size is greatly reduced, and more importantly, the structure can be arranged on a microbridge structure for a terahertz room temperature detector. The structure has the advantages of being small in size, simple in structure and high in terahertz radiation absorption and capable of being compatible with the existing microbridge structure to make the terahertz room temperature detector, and the detection imaging resolution is improved.

Description

technical field [0001] The invention relates to the technical field of terahertz wave detection, and more specifically, to a terahertz absorbing structure with reduced size and its application in a terahertz room temperature detector. Background technique [0002] Terahertz waves refer to electromagnetic radiation with a frequency between 0.1-10THz (wavelength 3mm-30μm), and its electromagnetic spectrum is between the microwave and infrared bands. Therefore, the terahertz system takes into account the advantages of both electronics and optical systems. For a long time, due to the lack of effective THz radiation generation and detection methods, people's understanding of the nature of electromagnetic radiation in this band is very limited, so that this band is called the THz gap in the electromagnetic wave. This band is also the last frequency window in the electromagnetic spectrum to be fully studied. [0003] Compared with electromagnetic waves in other bands, THz electrom...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/00
Inventor 王军丁杰郭晓珮蒋亚东吴志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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