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Organic thin film transistor, manufacturing method thereof, array substrate and display device

An organic thin film and array substrate technology, applied in the field of thin film transistors, can solve the problems of easy disconnection, poor, large organic semiconductor layer formation effect, etc., and achieve the effect of avoiding waste, reducing production costs, and ensuring quality and performance.

Inactive Publication Date: 2014-12-17
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Embodiments of the present invention provide an organic thin film transistor and its manufacturing method, an array substrate, and a display device, which solves the problem that the contact angle of the electrode layer in the thin film transistor is relatively large, which makes the formation of the organic semiconductor layer poor and prone to disconnection. , to ensure the quality and performance of thin film transistors, avoid waste of raw materials, and reduce production costs

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  • Organic thin film transistor, manufacturing method thereof, array substrate and display device
  • Organic thin film transistor, manufacturing method thereof, array substrate and display device
  • Organic thin film transistor, manufacturing method thereof, array substrate and display device

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Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0042] An embodiment of the present invention provides an organic thin film transistor. The organic thin film transistor can be of two types: gate bottom contact and gate top contact. In this embodiment, only the gate bottom contact mode is used as an example for illustration. Refer to figure 1 As shown, the organic thin film transistor includes: a substrate 1, a gate 2, a gate insulating layer 3, a source 4, a drain 5, an organic semiconductor layer 6 and a mo...

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Abstract

An embodiment of the invention provides an organic thin film transistor, a manufacturing method thereof, an array substrate and a display device and relates to the technical field of thin film transistors. The problem that an organic semiconductor layer is poor in forming effect and prone to line breaking due to large contact angle of an electrode layer in a thin film transistor is solved, quality and performance of the thin film transistor is guaranteed, wasting of raw materials is avoided, and production cost is lowered. The organic thin film transistor comprises a source electrode, a drain electrode, the organic semiconductor layer arranged above the source electrode and the drain electrode, and a modifying layer, and the modifying layer is arranged at a position, corresponding to the source electrode and the drain electrode, below the organic semiconductor layer, covers the source electrode and the drain electrode and is used for changing the contact angle of the source electrode and the drain electrode. The organic thin film transistor is applied in the technical field of display.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to an organic thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] In recent years, with the continuous development of science and technology, the performance of electronic devices has been gradually improved. In the structure of the display panel of the thin film transistor device in the prior art, the source and drain electrodes are generally made of metal materials, which ensures Conductivity of source and drain electrodes. Meanwhile, in order to ensure the performance of electronic devices, an organic semiconductor layer is usually formed on the source and drain electrodes. [0003] However, due to the relatively large contact angles of the source and drain electrodes, there will be a problem that the spreading behavior of the organic semiconductor layer will be poor when forming the organic s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/10H01L51/40H10K99/00
CPCH10K10/84H10K10/466H10K71/233H10K10/474H10K10/481H10K10/88
Inventor 方汉铿谢应涛欧阳世宏蔡述澄石强刘则
Owner BOE TECH GRP CO LTD