A kind of LED chip annealing device

Abstract

The invention relates to an LED chip manufacturing device, and further discloses an annealing apparatus for an LED chip manufacturing device. The LED chip annealing apparatus comprises wafer boxes for storing wafers and a process cavity for performing annealing processing on the wafers. The cavity body of the process cavity is internally provided with a quartz isolation cavity, and halogen lamp tubes are uniformly arranged between the quartz isolation cavity and the inner wall of the process cavity; the outer side of the output port of each wafer box is provided with a buffer memory station which is disposed at the same horizontal plane with each wafer box and is capable of accommodating one wafer, and conveyer belts for conveying the wafers to the buffer memory stations are arranged below the wafer boxes; and the annealing apparatus further comprises a pallet, and the annealing apparatus is also provided with a conveying mechanism for conveying the wafers in the wafer boxes to each wafer grid of the pallet. According to the LED chip annealing apparatus provided by the invention, the design of halogen lamps in the process cavity and the process cavity can help to realize rapid annealing, the arranged pallet and the conveying mechanism help to realize simultaneous entry of the multiple wafers into the process cavity, the automation degree is high, and the efficiency is improved.

Description

technical field [0001] The invention relates to LED chip manufacturing equipment, and further refers to an annealing device used in the LED chip manufacturing equipment. Background technique [0002] As a new lighting method, LED has attracted people's attention. With the deepening of device research and development, the preparation of its chips has become more and more important. At present, the technical level of ultra-high-brightness LED epitaxial chips in my country has been significantly improved, and multi-faceted research has been carried out in epitaxial growth and chip manufacturing, such as growing GaN epitaxial wafers on different substrates (Si, SiC) and patterned substrate epitaxy. , non-polar epitaxy, substrate transfer, laser lift-off, eutectic welding, ITO electrodes, surface roughening, and photonic crystals and other new structures, new technologies, and new processes. The domestic use of drying furnaces or Manual low-temperature annealing furnace has slow ...

AI Technical Summary

Problems solved by technology

At present, the technical level of ultra-high-brightness LED epitaxial chips in my country has been significantly improved, and multi-faceted research has been carried out in epitaxial growth and chip manufacturing, such as growing GaN epitaxial wafers on different substrates (Si, SiC) and patterned substrate epitaxy. , non-polar epitaxy, substrate transfer, laser lift-off, eutectic welding, ITO electrodes, surface roughening, and photonic crystals and other new structures, new technologies, and new processes. The domestic use of drying furnaces or Manual low-temperature annealing furnace, slow annealing speed and low efficiency

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