Solid-state imaging device and method of manufacturing the same

Abstract

A solid-state imaging device includes a semiconductor layer, a reflector, and a plurality of element separating regions. In the semiconductor layer, a plurality of photoelectric conversion elements is arranged in a two-dimensional array. The reflector covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which alight is incident, and reflects the light. The element separating regions are formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements. Each of the element separating regions extend from the surface of the semiconductor layer on which the light is incident to the reflector and has a reflection surface for reflecting light.

Description

[0001] References for related applications [0002] This application enjoys the benefit of priority of Japanese Patent Application No. 2013-155182 filed on July 26, 2013, and the entire content of the Japanese Patent Application is incorporated herein by reference. technical field [0003] Embodiments of the present invention relate to a solid-state imaging device and a method of manufacturing the solid-state imaging device. Background technique [0004] Conventionally, electronic equipment such as a digital camera and a camera-equipped portable terminal has a camera module including a solid-state imaging device. A solid-state imaging device includes a plurality of photoelectric conversion elements arranged in a two-dimensional array corresponding to each pixel of a captured image. Each photoelectric conversion element photoelectrically converts incident light into electric charges corresponding to the amount of received light, and stores them as signal charges indicating t...

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Problems solved by technology

However, in a back-illuminated solid-state imaging device, it is necessary to expose the light-receiving surface of each photoelectric conversion element by grinding the semiconductor layer from the back side to make it thinner. Therefore, there is a possibility that a part of the light that should be received is transmitted and thinned. The problem of reduced light sensitivity due to the semiconductor layer

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