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Solid-state imaging device

A solid-state imaging device and semiconductor technology, which is applied in the direction of electric solid-state devices, radiation control devices, semiconductor devices, etc., and can solve the problems of light sensitivity reduction and area reduction

Inactive Publication Date: 2015-09-09
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Along with this, in the solid-state imaging device, the area of ​​the light-receiving surface of each photoelectric conversion element is reduced, so the light-receiving sensitivity decreases.

Method used

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Experimental program
Comparison scheme
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no. 1 approach

[0025] figure 1 It is a block diagram showing a schematic configuration of the digital video camera 1 including the solid-state imaging device 14 of the first embodiment. like figure 1 As shown, the digital video camera 1 includes a camera module 11 and a post-processing unit 12 .

[0026] The camera module 11 includes an imaging optical system 13 and a solid-state imaging device 14 . The imaging optical system 13 acquires light from a subject to form a subject image. The solid-state imaging device 14 captures a subject image formed by the imaging optical system 13 , and outputs an image signal obtained by the imaging to the subsequent processing unit 12 . The camera module 11 is applicable to, for example, electronic equipment such as a portable terminal with a camera, other than the digital video camera 1 .

[0027] The post-processing unit 12 includes an ISP (Image Signal Processor) 15 , a storage unit 16 , and a display unit 17 . The ISP 15 performs signal processing ...

no. 2 approach

[0129] Next, a second embodiment will be described. In the pixel array 23 of the first embodiment, the charge transfer operation from the memory diode 53 to the floating diffusion 68 is performed by using the read gate 64 .

[0130] In the pixel array 23 a of the second embodiment, the transfer from the memory diode 53 to the floating diffusion 68 is performed by an amplifier transistor without using the read gate 64 . For such a configuration, refer to Figure 9 to illustrate.

[0131] Figure 9 It is an explanatory diagram showing a part of the configuration of the pixel array 23a of the second embodiment. Additionally, for Figure 9 Among the components shown, and Figure 8 The constituent elements shown have the same functions as constituent elements, by assigning Figure 8 The symbols shown are the same symbols, and descriptions thereof are omitted.

[0132] like Figure 9 As shown, the pixel array 23a has no reading gate 64, a contact plug 6 at a position close t...

no. 3 approach

[0139]Next, a third embodiment will be described. In the pixel array 23 of the first embodiment, the color filters 7 a and 7 b are provided on the side opposite to the incident side of the light 9 in the organic photoelectric conversion layer 40 . The configuration is not limited to this form, and the color filter may be provided at a position on the incident side of the light 9 in the organic photoelectric conversion layer 40 .

[0140] In this case, on the light-receiving surface side of the organic photoelectric conversion layer 40, a yellow (Ye) color filter 8a that selectively transmits light in the red and green wavelength ranges and a yellow (Ye) color filter 8a that selectively transmits light in the blue and green wavelength ranges are provided. A selectively transmissive cyan (Cy) color filter 8b. That is, the color-complementary color filters 8a and 8b are used in the pixel array 23b.

[0141] Figure 10 It is an explanatory diagram showing a part of the cross-se...

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Abstract

According to one embodiment, a solid-state imaging device includes a semiconductor layer, an organic photoelectric conversion layer, and microlenses. A plurality of photoelectric conversion elements are provided in the semiconductor layer. The organic photoelectric conversion layer is provided on a light receiving surface of the semiconductor layer, absorbs and photoelectrically converts light of a predetermined wavelength region, and transmits light of a wavelength region except for the predetermined wavelength region. The microlenses are provided at positions facing the respective light receiving surfaces of the plurality of photoelectric conversion elements with the organic photoelectric conversion layer interposed therebetween, and concentrate incident light on the photoelectric conversion elements.

Description

[0001] References to related applications: [0002] This application claims the benefit of priority of Japanese Patent Application No. 2014-042132 filed on Mar. 4, 2014, the entire contents of which are incorporated into this application. technical field [0003] This embodiment generally relates to a solid-state imaging device. Background technique [0004] Conventionally, a solid-state imaging device includes a plurality of photoelectric conversion elements that photoelectrically convert incident light. On the light-receiving surface side of each photoelectric conversion element, for example, a color filter that selectively transmits light of any one of red, blue, and green is arranged in a two-dimensional Bayer array. [0005] As the size of the solid-state imaging device has progressed in recent years, there is a tendency for the photoelectric conversion element corresponding to each pixel of the captured image to be miniaturized. Along with this, in the solid-state im...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14627H01L27/14621H01L27/14623H01L27/14609H01L27/1461H01L27/14625H01L27/1464H01L27/14643H01L27/14665H01L27/14667H10K39/32
Inventor 杉浦裕树
Owner KK TOSHIBA
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